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Preparation of Lead Zirconate Titanate Thin Films by Reactive Evaporation
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Lead zirconate titanate thin films have been successfully fabricated by reactive evaporation. Elemental Pb, Zr, and Ti were evaporated in ozone-oxygen mixture ambient. Excellent controls of uniformity of thickness and composition were achieved over a large area (within ±2% on 4-inch wafer). The electrical properties were examined as a function of Pb content in the films. High dielectric constant (ε∼1000) and low leakage current ( 1.7×10-7 A/cm2) were realized for the film with stoichiometric composition.
Title: Preparation of Lead Zirconate Titanate Thin Films by Reactive Evaporation
Description:
Lead zirconate titanate thin films have been successfully fabricated by reactive evaporation.
Elemental Pb, Zr, and Ti were evaporated in ozone-oxygen mixture ambient.
Excellent controls of uniformity of thickness and composition were achieved over a large area (within ±2% on 4-inch wafer).
The electrical properties were examined as a function of Pb content in the films.
High dielectric constant (ε∼1000) and low leakage current ( 1.
7×10-7 A/cm2) were realized for the film with stoichiometric composition.
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