Effect of inner electric field on the photoluminescence spectrum of nanosilicon

Based on the quantum confinement-luminescence center model, the relation between the inner electric field (IEF) and the photoluminescence(PL) character is calculated. Results show that the IEF between nanosilicon and luminescence centers (LCs) can have a strong effect on the carrier recombination rate and the spectrum peak position swinging. In the range from 2 to 5 nm, the carrier recombination rate at the LCs is much bigger than the rates of recombination inside the nanosilicon. And dut to the presence of IEF between nanosilicon and LCs, the PL intensity at the LCs and inside nanosilicon will reduce remarkably.