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Decrease in electrical contact resistance of Sb-doped n + -BaSi 2 layers and spectral response of an Sb-doped n + -BaSi
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Abstract
We investigated how the electron concentration
n
in a 300-nm-thick Sb-doped n
+
-BaSi
2
layer grown by molecular beam epitaxy affected the contact resistance
R
C
to surface electrodes (Al, indium–tin-oxide). As the
n
of n-BaSi
2
increased,
R
C
decreased and reached a minimum of 0.019 Ω cm
2
at
n
= 2.4 × 10
18
cm
−3
for the Al electrodes. This value was more than 1 order of magnitude smaller than that obtained for Al/B-doped p-BaSi
2
. We believe that this significant decrease in
R
C
came from Sb segregation. Furthermore, the internal quantum efficiency (
IQE
) spectrum was evaluated for an Sb-doped n
+
-BaSi
2
(20 nm)/undoped BaSi
2
(500 nm)/n
+
-Si(111) structure. Its
IQE
reached as high as ∼50% over a wide wavelength range under a small bias voltage of 0.1 V applied between the top and bottom electrodes.
Title: Decrease in electrical contact resistance of Sb-doped n
+
-BaSi
2
layers and spectral response of an Sb-doped n
+
-BaSi
Description:
Abstract
We investigated how the electron concentration
n
in a 300-nm-thick Sb-doped n
+
-BaSi
2
layer grown by molecular beam epitaxy affected the contact resistance
R
C
to surface electrodes (Al, indium–tin-oxide).
As the
n
of n-BaSi
2
increased,
R
C
decreased and reached a minimum of 0.
019 Ω cm
2
at
n
= 2.
4 × 10
18
cm
−3
for the Al electrodes.
This value was more than 1 order of magnitude smaller than that obtained for Al/B-doped p-BaSi
2
.
We believe that this significant decrease in
R
C
came from Sb segregation.
Furthermore, the internal quantum efficiency (
IQE
) spectrum was evaluated for an Sb-doped n
+
-BaSi
2
(20 nm)/undoped BaSi
2
(500 nm)/n
+
-Si(111) structure.
Its
IQE
reached as high as ∼50% over a wide wavelength range under a small bias voltage of 0.
1 V applied between the top and bottom electrodes.
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