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Effects of Atomic Hydrogen on the Indium Incorporation in InGaN Grown by RF-Molecular Beam Epitaxy
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We investigated the effect of atomic hydrogen(H) irradiation on the In incorporation
in InGaN films grown by RF-molecular beam epitaxy (MBE).
The molecular hydrogen (H2) and atomic H irradiation in InGaN growth by RF-MBE
were found to enhance the In incorporation.
The atomic H irradiation in InGaN growth increased the In incorporation
with increasing H2 flow rate.
The In incorporation for samples grown with H was higher than without H2
in the temperature range of 640°C to 700°C.
These results may represent a new and interesting avenue of investigation
into the understanding of growth of III-nitride films.
We consider that the mechanisms responsible for the modification of
In incorporation by atomic H irradiation are mainly
due to an increase of the nitrogen species
and partly to suppression of 3-dimensional(3-D) growth
thereby enhancing a 2-D growth.
Title: Effects of Atomic Hydrogen on the Indium Incorporation in InGaN Grown by RF-Molecular Beam Epitaxy
Description:
We investigated the effect of atomic hydrogen(H) irradiation on the In incorporation
in InGaN films grown by RF-molecular beam epitaxy (MBE).
The molecular hydrogen (H2) and atomic H irradiation in InGaN growth by RF-MBE
were found to enhance the In incorporation.
The atomic H irradiation in InGaN growth increased the In incorporation
with increasing H2 flow rate.
The In incorporation for samples grown with H was higher than without H2
in the temperature range of 640°C to 700°C.
These results may represent a new and interesting avenue of investigation
into the understanding of growth of III-nitride films.
We consider that the mechanisms responsible for the modification of
In incorporation by atomic H irradiation are mainly
due to an increase of the nitrogen species
and partly to suppression of 3-dimensional(3-D) growth
thereby enhancing a 2-D growth.
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