Search engine for discovering works of Art, research articles, and books related to Art and Culture
Javascript must be enabled to continue!
Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays
View through CrossRef
AbstractOne-dimensional crystal growth enables the epitaxial integration of III-V compound semiconductors onto a silicon (Si) substrate despite significant lattice mismatch. Here, we report a short-wavelength infrared (SWIR, 1.4–3 μm) photodetector that employs InAs nanowires (NWs) grown on Si. The wafer-scale epitaxial InAs NWs form on the Si substrate without a metal catalyst or pattern assistance; thus, the growth is free of metal-atom-induced contaminations and is also cost-effective. InAs NW arrays with an average height of 50 μm provide excellent anti-reflective and light trapping properties over a wide wavelength range. The photodetector exhibits a peak detectivity of 1.9 × 108 cm·Hz1/2/W for the SWIR band at 77 K and operates at temperatures as high as 220 K. The SWIR photodetector on the Si platform demonstrated in this study is promising for future low-cost optical sensors and Si photonics.
Springer Science and Business Media LLC
Title: Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays
Description:
AbstractOne-dimensional crystal growth enables the epitaxial integration of III-V compound semiconductors onto a silicon (Si) substrate despite significant lattice mismatch.
Here, we report a short-wavelength infrared (SWIR, 1.
4–3 μm) photodetector that employs InAs nanowires (NWs) grown on Si.
The wafer-scale epitaxial InAs NWs form on the Si substrate without a metal catalyst or pattern assistance; thus, the growth is free of metal-atom-induced contaminations and is also cost-effective.
InAs NW arrays with an average height of 50 μm provide excellent anti-reflective and light trapping properties over a wide wavelength range.
The photodetector exhibits a peak detectivity of 1.
9 × 108 cm·Hz1/2/W for the SWIR band at 77 K and operates at temperatures as high as 220 K.
The SWIR photodetector on the Si platform demonstrated in this study is promising for future low-cost optical sensors and Si photonics.
Related Results
Expanding the floating catalyst synthesis of inorganic 1D nanomaterials and their assembly into macroscopic networks
Expanding the floating catalyst synthesis of inorganic 1D nanomaterials and their assembly into macroscopic networks
Floating Catalyst Chemical Vapour Deposition (FCCVD) represents a promising method for assembling one-dimensional (1D) nanostructures into macroscopic materials for high-performanc...
Self-Standing 3D Thin Film Cathodes for Micobatteries
Self-Standing 3D Thin Film Cathodes for Micobatteries
While the microelectronic industry is advancing at a rapid pace with smaller and smaller devices, the implementation of microelectro-mechanical systems (MEMS) on the market strongl...
Chemically and Electronically Active Metal Ions on InAs Quantum Dots for Infrared Detectors
Chemically and Electronically Active Metal Ions on InAs Quantum Dots for Infrared Detectors
AbstractColloidal InAs quantum dots (QDs) are emerging candidates for NIR-SWIR optoelectronic applications because of their excellent electrical and optical properties. However, th...
Phase Control Growth of InAs Nanowires by Using Bi Surfactant
Phase Control Growth of InAs Nanowires by Using Bi Surfactant
To realize practical applications of nanowire-based devices, it is critical, yet challenging, to control crystal structure growth of III-V semiconductor nanowires. Here, we demonst...
Novel Nanofabrication Process for InAs/AlGaSb Heterostructures Utilizing Atomic Force Microscope Oxidation
Novel Nanofabrication Process for InAs/AlGaSb Heterostructures Utilizing Atomic Force Microscope Oxidation
We demonstrate a novel nanofabrication process for InAs which is shown to be readily applicable to the fabrication of InAs-based nanostructure devices that employ quantum dot or wi...
Increase of Critical Thickness and Optical Emission Range in (InAs)1(GaAs)n Strained Short-Period Superlattices
Increase of Critical Thickness and Optical Emission Range in (InAs)1(GaAs)n Strained Short-Period Superlattices
The critical thickness and optical emission wavelength range of (InAs)1(GaAs)
n
strained sho...
Flexible p-i-n InAs thin-film photodetector with low dark current enabled by an InAlAs barrier
Flexible p-i-n InAs thin-film photodetector with low dark current enabled by an InAlAs barrier
Flexible mid-infrared photodetectors are essential to realize advanced imaging applications, including wearable healthcare monitoring, security, and biomedical applications. Here, ...
A Single-Electron Transistor Produced by Nanoscale Oxidation of InAs
A Single-Electron Transistor Produced by Nanoscale Oxidation of InAs
Atomic force microscope (AFM) oxidation was applied for the direct oxidation of a thin InAs layer in order to fabricate a single-electron transistor (SET) from an InAs/AlGaSb heter...