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Sidewall epitaxial lateral overgrowth of nonpolar a‐plane GaN by metalorganic vapor phase epitaxy
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AbstractA major obstacle to achieving high‐performance devices using nonpolar a‐plane and m‐plane GaN is the existence of high‐density threading dislocations and stacking faults. Low‐defect‐density nonpolar plane GaN films were previously grown by sidewall epitaxial overgrowth using metalorganic vapor phase epitaxy [1, 2]. In this study, we control the growth‐rate ratio of Ga‐polar GaN to N‐polar GaN by adjusting the V/III ratio. It is possible to grow GaN only from the N‐face sidewall of grooves by maintaining a high V/III ratio, which reduces the number of coalescence regions on grooves and decreases the threading‐dislocation density and stacking‐fault density. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Title: Sidewall epitaxial lateral overgrowth of nonpolar a‐plane GaN by metalorganic vapor phase epitaxy
Description:
AbstractA major obstacle to achieving high‐performance devices using nonpolar a‐plane and m‐plane GaN is the existence of high‐density threading dislocations and stacking faults.
Low‐defect‐density nonpolar plane GaN films were previously grown by sidewall epitaxial overgrowth using metalorganic vapor phase epitaxy [1, 2].
In this study, we control the growth‐rate ratio of Ga‐polar GaN to N‐polar GaN by adjusting the V/III ratio.
It is possible to grow GaN only from the N‐face sidewall of grooves by maintaining a high V/III ratio, which reduces the number of coalescence regions on grooves and decreases the threading‐dislocation density and stacking‐fault density.
(© 2008 WILEY‐VCH Verlag GmbH & Co.
KGaA, Weinheim).
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