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Electrical Characteristics of Ultra-Thin Oxynitride Gate Dielectric Prepared by Reoxidation of Thermal Nitride in D2O
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The electrical and reliability characteristics of ultra-thin oxynitride
gate dielectric prepared by oxidation of thermal nitride in D2O
ambient were investigated. Compared with H2O reoxidation, D2O
reoxidation exhibit less hole trapping, larger charge-to-breakdown and
significant reduction of interface state generation under the electrical
stress. The improvement of electrical and reliability characteristics
can be explained by the deuterium incorporation. The new oxynitride gate
dielectric prepared by D2O reoxidation provides a good promise for
future ultra large scaled integration (ULSI) device applications.
Title: Electrical Characteristics of Ultra-Thin Oxynitride Gate Dielectric Prepared by Reoxidation of Thermal Nitride in D2O
Description:
The electrical and reliability characteristics of ultra-thin oxynitride
gate dielectric prepared by oxidation of thermal nitride in D2O
ambient were investigated.
Compared with H2O reoxidation, D2O
reoxidation exhibit less hole trapping, larger charge-to-breakdown and
significant reduction of interface state generation under the electrical
stress.
The improvement of electrical and reliability characteristics
can be explained by the deuterium incorporation.
The new oxynitride gate
dielectric prepared by D2O reoxidation provides a good promise for
future ultra large scaled integration (ULSI) device applications.
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