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Study of the Within-Batch TID Response Variability on Silicon-Based VDMOS Devices
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Silicon-based vertical double-diffused MOSFET (VDMOS) devices are important components of the power system of spacecraft. However, VDMOS is sensitive to the total ionizing dose (TID) effect and may have TID response variability. The within-batch TID response variability on silicon-based VDMOS devices is studied by the 60Co gamma-ray irradiation experiment in this paper. The variations in device parameters after irradiation is obtained, and the damage mechanism is revealed. Experimental results show that the standard deviations of threshold voltage, subthreshold swing, output capacitance, and diode forward voltage increase, while the standard deviation of maximum transconductance decreases after irradiation. The standard deviation of on-state resistance is basically unchanged before and after irradiation. By separating the trapped charges generated by TID irradiation, it is found that the deviation of the oxide trapped charges and the interface traps increase with the increase in the total dose. The reasons for the variation in device parameters after irradiation are revealed by establishing the relationship between the trapped charges and the electrical parameters before and after irradiation.
Title: Study of the Within-Batch TID Response Variability on Silicon-Based VDMOS Devices
Description:
Silicon-based vertical double-diffused MOSFET (VDMOS) devices are important components of the power system of spacecraft.
However, VDMOS is sensitive to the total ionizing dose (TID) effect and may have TID response variability.
The within-batch TID response variability on silicon-based VDMOS devices is studied by the 60Co gamma-ray irradiation experiment in this paper.
The variations in device parameters after irradiation is obtained, and the damage mechanism is revealed.
Experimental results show that the standard deviations of threshold voltage, subthreshold swing, output capacitance, and diode forward voltage increase, while the standard deviation of maximum transconductance decreases after irradiation.
The standard deviation of on-state resistance is basically unchanged before and after irradiation.
By separating the trapped charges generated by TID irradiation, it is found that the deviation of the oxide trapped charges and the interface traps increase with the increase in the total dose.
The reasons for the variation in device parameters after irradiation are revealed by establishing the relationship between the trapped charges and the electrical parameters before and after irradiation.
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