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Development of Low Dielectric Constant Ferroelectric Materials for the Ferroelectric Memory Feild Effect Transistor
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In this paper
we discuss ferroelectric materials suitable for a metal-ferroelectric-metal-
insulator-semiconductor feild effect transistor (MFMIS FET).
It is important for a ferroelectric material to have a low dielectric constant
to enable the application of
sufficient electric field to a ferroelectric layer.
Films of Sr2Nb2O7 and Sr2(Ta1-x
Nbx)2O7
were prepared by the sol-gel method on Pt/IrO2 electrodes for an MFMIS FET.
The ferroelectricities of Sr2(Ta1-x
Nbx)2O7 films were confirmed
to be in the range of x=0.1–0.3.
In the case of x=0.3, the largest remanent polarization was obtained in the
hysteresis loop.
The values of the remanent polarization and the coercive field are
0.5 µC/cm2 and 44 kV/cm, respectively.
The film has a low dielectric constant (ε r=53).
The characteristics of Sr2(Ta1-x
Nbx)2O7 thin films
are suitable for MFMIS FET.
Title: Development of Low Dielectric Constant Ferroelectric Materials for the Ferroelectric Memory Feild Effect Transistor
Description:
In this paper
we discuss ferroelectric materials suitable for a metal-ferroelectric-metal-
insulator-semiconductor feild effect transistor (MFMIS FET).
It is important for a ferroelectric material to have a low dielectric constant
to enable the application of
sufficient electric field to a ferroelectric layer.
Films of Sr2Nb2O7 and Sr2(Ta1-x
Nbx)2O7
were prepared by the sol-gel method on Pt/IrO2 electrodes for an MFMIS FET.
The ferroelectricities of Sr2(Ta1-x
Nbx)2O7 films were confirmed
to be in the range of x=0.
1–0.
3.
In the case of x=0.
3, the largest remanent polarization was obtained in the
hysteresis loop.
The values of the remanent polarization and the coercive field are
0.
5 µC/cm2 and 44 kV/cm, respectively.
The film has a low dielectric constant (ε r=53).
The characteristics of Sr2(Ta1-x
Nbx)2O7 thin films
are suitable for MFMIS FET.
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