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New Evaluation Method of Resist Coating Using Heterodyne Holographic Wafer Alignment
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A new method to evaluate nonuniform resist coating using heterodyne holographic wafer alignment was proposed. In this method, the resist coating nonuniformity is measured as the displacement of the alignment position after resist coating on deep-UV-hardened resist alignment gratings. It has been confirmed that nonuniformity of resist coating was mainly caused by the nonuniform evaporation speed of the resist solvent, and the uniformity of resist coating was obtained by optimizing the solvent and the viscosity of the resist. The resultant overlay accuracy was improved to 59 nm/3σ for the optimized resist coating. The overlay error budget for processed wafers was analyzed and the overlay accuracy was confirmed to be better than 80 nm/3σ using this method and wafer scaling correction.
Title: New Evaluation Method of Resist Coating Using Heterodyne Holographic Wafer Alignment
Description:
A new method to evaluate nonuniform resist coating using heterodyne holographic wafer alignment was proposed.
In this method, the resist coating nonuniformity is measured as the displacement of the alignment position after resist coating on deep-UV-hardened resist alignment gratings.
It has been confirmed that nonuniformity of resist coating was mainly caused by the nonuniform evaporation speed of the resist solvent, and the uniformity of resist coating was obtained by optimizing the solvent and the viscosity of the resist.
The resultant overlay accuracy was improved to 59 nm/3σ for the optimized resist coating.
The overlay error budget for processed wafers was analyzed and the overlay accuracy was confirmed to be better than 80 nm/3σ using this method and wafer scaling correction.
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