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(Keynote) Future Advanced Devices

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Semiconductor devices are pivotal technologies for almost all existing industrial sectors, as demonstrated by the recent chips shortages. For future sustainable societies, a holistic approach is needed with the combination of several pillars: Speed up technological innovation for sustainable growth for many applications, digitalization of many domains to reduce footprint, electronic monitoring targeting societal challenges like health and environment. The substantial increase of electronic systems and IoT devices, the exponential augmentation of computing power for AI training, the strong growth of ICT share and the limit in electrical energy consumption, the problem of E-waste, and the lack of material availability put forward the need of alternative materials, devices and system architectures. Disruptive devices have been instrumental in the past for substantial improvements in the performance of electronic circuits and systems. In this regards, FDSOI, multi-gate devices, nanowires, 2D devices, 3D device architectures have shown promising electrical properties for various applications. This paper presents possible solutions for future devices needed for various applications, in order to overcome the main challenges of future ICT systems. Nanowires, ultrathin films, gate-all-around structures, advanced materials such as 1D or 2D, alternative device architectures such as steep slope switches, heterostructures, and ultimate nanodevices based on other innovative device architectures are highlighted, which will be able to reach the ambitious targets of the IRDS Roadmap for the next decades [1-13]. References [1] F. Balestra, “Advanced technologies for future materials and devices”, Chapter in Springer Handbook of Semiconductor Devices, Nov. 2022, pp. 309-328, https://doi.org/10.1007/978-3-030-79827-7_9 [2] F. Balestra, Challenges for high performance and very low power operation at the end of the Roadmap, Solid-State Electronics, Volume 155, May 2019, pp. 27-31 [3] S.B. Deasy et al, Science, Vol. 354, Issue 6308, pp. 99-102, 2016 [4] A. Saeidi, IEEE EDL, VOL. 38, No. 10, p.1487, Oct. 2017 [5] M.H. Lee, IEDM 18, p. 735 [6] Z. Yu, IEDM 18, p. 524 [7] A. Saeidi, IEDM 18, p. 304 [8] C.-H. Yeh et al, DOI: 10.1109/IEDM19573.2019.8993600, IEDM 2019 [9] D. Akinwande et al, doi: 10.1038/s41586-019-1573-9, Nature, Sept. 2019 [10] I. Asselberghs, DOI: 10.1109/IEDM13553.2020.9371926, IEDM 2020 [11] G. Gandus, IEDM 2022 [12] Yun-Yan Chung et al, IEDM 2023 [13] International Roadmap for Devices and Systems, IEEE/IRDS, 2024
The Electrochemical Society
Title: (Keynote) Future Advanced Devices
Description:
Semiconductor devices are pivotal technologies for almost all existing industrial sectors, as demonstrated by the recent chips shortages.
For future sustainable societies, a holistic approach is needed with the combination of several pillars: Speed up technological innovation for sustainable growth for many applications, digitalization of many domains to reduce footprint, electronic monitoring targeting societal challenges like health and environment.
The substantial increase of electronic systems and IoT devices, the exponential augmentation of computing power for AI training, the strong growth of ICT share and the limit in electrical energy consumption, the problem of E-waste, and the lack of material availability put forward the need of alternative materials, devices and system architectures.
Disruptive devices have been instrumental in the past for substantial improvements in the performance of electronic circuits and systems.
In this regards, FDSOI, multi-gate devices, nanowires, 2D devices, 3D device architectures have shown promising electrical properties for various applications.
This paper presents possible solutions for future devices needed for various applications, in order to overcome the main challenges of future ICT systems.
Nanowires, ultrathin films, gate-all-around structures, advanced materials such as 1D or 2D, alternative device architectures such as steep slope switches, heterostructures, and ultimate nanodevices based on other innovative device architectures are highlighted, which will be able to reach the ambitious targets of the IRDS Roadmap for the next decades [1-13].
References [1] F.
Balestra, “Advanced technologies for future materials and devices”, Chapter in Springer Handbook of Semiconductor Devices, Nov.
2022, pp.
309-328, https://doi.
org/10.
1007/978-3-030-79827-7_9 [2] F.
Balestra, Challenges for high performance and very low power operation at the end of the Roadmap, Solid-State Electronics, Volume 155, May 2019, pp.
27-31 [3] S.
B.
Deasy et al, Science, Vol.
354, Issue 6308, pp.
99-102, 2016 [4] A.
Saeidi, IEEE EDL, VOL.
38, No.
10, p.
1487, Oct.
2017 [5] M.
H.
Lee, IEDM 18, p.
735 [6] Z.
Yu, IEDM 18, p.
524 [7] A.
Saeidi, IEDM 18, p.
304 [8] C.
-H.
Yeh et al, DOI: 10.
1109/IEDM19573.
2019.
8993600, IEDM 2019 [9] D.
Akinwande et al, doi: 10.
1038/s41586-019-1573-9, Nature, Sept.
2019 [10] I.
Asselberghs, DOI: 10.
1109/IEDM13553.
2020.
9371926, IEDM 2020 [11] G.
Gandus, IEDM 2022 [12] Yun-Yan Chung et al, IEDM 2023 [13] International Roadmap for Devices and Systems, IEEE/IRDS, 2024.

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