Laser Annealing Solution for FS-IGBT

Recent years, laser spike annealing (LSA) is considered to be mainstream technology for ultra-shallow junction (USJ), silicide formation and extended to insulated gate bipolar transistor (IGBT) annealing. Now, Shanghai Micro Electronics Equipment (SMEE) has achieved to find the solution for field stop IGBT (FS-IGBT) annealing. Comparing to traditional rapid thermal process (RTP), the advantages of LSA can be shown from several aspects. Firstly, I will introduce our laser annealing tool for FS-IGBT with its key specification overall and explain the consideration why FS-IGBT need LSA. Secondly, some experiment datum and predictable results have been analyzed and summarized in this article. Our work will continue to improve the tool performance by stability, repeatability and uniformity. Last but not least, we believed that laser spike annealing will become one of the key processes for FS-IGBT in the near future.