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Influence of ridge waveguide on the GaN-based green laser diodes
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Abstract
The influence of ridge waveguide geometry on the performance of GaN-based green laser diodes (LDs) is systematically investigated using the two-dimensional simulator LASTIP. This study aims to elucidate the mechanisms by which ridge width and etching depth affect key device characteristics. For LDs with a wide ridge (40 μm), the optical output power is found to be critically dependent on the ridge structure, primarily governed by the optical field distribution and the optical confinement factor. In contrast, for narrow-ridge (20 μm, 30 μm) LDs, the optical power is significantly lower and shows a weak correlation with optical loss, attributed to reduced modal gain. The analysis reveals that the interplay between modal gain, optical confinement, and optical loss dictates the optimal ridge design. Furthermore, a trade-off between achieving high optical power and low operating voltage is identified, as the ridge width exerts opposing effects on these two parameters. These findings provide a comprehensive guideline for designing the ridge waveguide in high-performance GaN-based green LDs.
Title: Influence of ridge waveguide on the GaN-based green laser diodes
Description:
Abstract
The influence of ridge waveguide geometry on the performance of GaN-based green laser diodes (LDs) is systematically investigated using the two-dimensional simulator LASTIP.
This study aims to elucidate the mechanisms by which ridge width and etching depth affect key device characteristics.
For LDs with a wide ridge (40 μm), the optical output power is found to be critically dependent on the ridge structure, primarily governed by the optical field distribution and the optical confinement factor.
In contrast, for narrow-ridge (20 μm, 30 μm) LDs, the optical power is significantly lower and shows a weak correlation with optical loss, attributed to reduced modal gain.
The analysis reveals that the interplay between modal gain, optical confinement, and optical loss dictates the optimal ridge design.
Furthermore, a trade-off between achieving high optical power and low operating voltage is identified, as the ridge width exerts opposing effects on these two parameters.
These findings provide a comprehensive guideline for designing the ridge waveguide in high-performance GaN-based green LDs.
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