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In Situ Focused Ion Beam (FIB) Observation of Al Electromigration
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A new method for obtaining real-time monitoring of stressed interconnects has been discovered. This technique uses the focused ion beam (FIB) system. Under a stress of 3 MA/cm2 at 473 K, voids grown at a triple point occurred in Al-1.0%Si interconnects, and hillocks formed, as is seen during in situ observation of the aluminum microstructure. Since this study is theoretical, additional observation and study of the electromigration phenomenon using in situ monitoring is recommended.
Title: In Situ Focused Ion Beam (FIB) Observation of Al Electromigration
Description:
A new method for obtaining real-time monitoring of stressed interconnects has been discovered.
This technique uses the focused ion beam (FIB) system.
Under a stress of 3 MA/cm2 at 473 K, voids grown at a triple point occurred in Al-1.
0%Si interconnects, and hillocks formed, as is seen during in situ observation of the aluminum microstructure.
Since this study is theoretical, additional observation and study of the electromigration phenomenon using in situ monitoring is recommended.
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