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The SiNxpassivation thickness effect on AlGaAs/InGaAs/GaAs pHEMT performance
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AbstractThe silicon nitride passivation thickness has been investigated extensively for AlGaAs/InGaAs/GaAs pHEMT characteristics in this paper. The experimental results show that the cutoff frequency will drop as the passivation thickness increases for a pHEMT. The electronic performance of the pHEMT was affected severely when SiNxthickness was larger than 2000 Å. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 29: 81–84, 2001.
Title: The SiNxpassivation thickness effect on AlGaAs/InGaAs/GaAs pHEMT performance
Description:
AbstractThe silicon nitride passivation thickness has been investigated extensively for AlGaAs/InGaAs/GaAs pHEMT characteristics in this paper.
The experimental results show that the cutoff frequency will drop as the passivation thickness increases for a pHEMT.
The electronic performance of the pHEMT was affected severely when SiNxthickness was larger than 2000 Å.
© 2001 John Wiley & Sons, Inc.
Microwave Opt Technol Lett 29: 81–84, 2001.
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