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New Heterostructures on the Basis of Cd1-xMnxTe Solid Solutions: Photoelectric Properties
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The new technology of energy barrier fabrication by thermal treatment of Cd1-xMnxTe solid solution crystal wafers was proposed. By the first time the Ox/Cd1-хMnхTe (х=0.00–0.70) heterostructures with rectifying and photosensitive properties was fabricated. The relative quantum efficiency of photoconversion of fabricated by the firs time heterostructures was investigated. The nature of the interband optical transitions and values of the band gap in Cd1-xMnxTe was determined.
Linnaeus University
Title: New Heterostructures on the Basis of Cd1-xMnxTe Solid Solutions: Photoelectric Properties
Description:
The new technology of energy barrier fabrication by thermal treatment of Cd1-xMnxTe solid solution crystal wafers was proposed.
By the first time the Ox/Cd1-хMnхTe (х=0.
00–0.
70) heterostructures with rectifying and photosensitive properties was fabricated.
The relative quantum efficiency of photoconversion of fabricated by the firs time heterostructures was investigated.
The nature of the interband optical transitions and values of the band gap in Cd1-xMnxTe was determined.
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