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Numerical Simulation of Static and Dynamic Characteristics of Dual-Gate Metal Oxide Semiconductor Thyristor
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Static and dynamic characteristics of a newly proposed vertical metal oxide semiconductor (MOS)-gated thyristor structure called the dual-gate MOS thyristor (DGMOT) are reported for the first time. The feature of this device is that IGBT mode turn-off is achieved due to a novel integration of a lateral n-metal oxide semiconductor field effect transistor (MOSFET) with the thyristor structure while the thyristor mode operation is achieved in the on state. It is possible to obtain a lower on-state voltage drop in the DGMOT while preserving its fast turn-off speed. It has been numerically demonstrated using 600 V forward blocking devices that the on-state voltage drop of 1.04 V and the turn-off time of 0.40 µ s are achieved. This result suggests that the DGMOT could be a superior alternative to the power bipolar junction transistor and may expand the application fields of the MOS-gated devices to the low-frequency operation circuit.
Title: Numerical Simulation of Static and Dynamic Characteristics of Dual-Gate Metal Oxide Semiconductor Thyristor
Description:
Static and dynamic characteristics of a newly proposed vertical metal oxide semiconductor (MOS)-gated thyristor structure called the dual-gate MOS thyristor (DGMOT) are reported for the first time.
The feature of this device is that IGBT mode turn-off is achieved due to a novel integration of a lateral n-metal oxide semiconductor field effect transistor (MOSFET) with the thyristor structure while the thyristor mode operation is achieved in the on state.
It is possible to obtain a lower on-state voltage drop in the DGMOT while preserving its fast turn-off speed.
It has been numerically demonstrated using 600 V forward blocking devices that the on-state voltage drop of 1.
04 V and the turn-off time of 0.
40 µ s are achieved.
This result suggests that the DGMOT could be a superior alternative to the power bipolar junction transistor and may expand the application fields of the MOS-gated devices to the low-frequency operation circuit.
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