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Rectifying and Photoconductive Properties of p‐GaSe Single Crystals
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AbstractThe current‐voltage characteristics of a CdGaSeBi diode structure are given for different values of temperature and illumination. The photovoltage and photocurrent characteristics and the photocurrent spectral distribution are also presented. The mean rectification coefficient is 104 at U = 2 V. The activation energies obtained from the temperature dependence of the exponential part of the forward current characteristic for different samples are grouped around the values 0.60 and 0.34 eV. The values of the open circuit voltage (V oc) and of the short circuit current (Isc) lie between 250 to 450 mV and 300 to 900 μA/cm2 respectively. It is found that photocells based on GaSe have a better time‐response than GaSe photoresistors.
Title: Rectifying and Photoconductive Properties of p‐GaSe Single Crystals
Description:
AbstractThe current‐voltage characteristics of a CdGaSeBi diode structure are given for different values of temperature and illumination.
The photovoltage and photocurrent characteristics and the photocurrent spectral distribution are also presented.
The mean rectification coefficient is 104 at U = 2 V.
The activation energies obtained from the temperature dependence of the exponential part of the forward current characteristic for different samples are grouped around the values 0.
60 and 0.
34 eV.
The values of the open circuit voltage (V oc) and of the short circuit current (Isc) lie between 250 to 450 mV and 300 to 900 μA/cm2 respectively.
It is found that photocells based on GaSe have a better time‐response than GaSe photoresistors.
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