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High power, 0.98 μm, Ga0.8In0.2As/GaAs/Ga0.51In0.49P multiple quantum well laser
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We report the fabrication of high quality Ga0.8In0.2As/GaAs/Ga0.51In0.49P multiple quantum well laser emitting at 0.98 μm grown by low pressure metalorganic chemical vapor deposition. Continuous wave operation with output power of 500 mW per facet was achieved at room temperature for a broad area laser with 130 μm width and 300 μm cavity length. This is an unusually high value of output power for this wavelength laser in this material system. The differential quantum efficiency exceeded 75% with excellent homogeneity and uniformity. The characteristic temperature, T0 was in the range of 120–130 K.
Title: High power, 0.98 μm, Ga0.8In0.2As/GaAs/Ga0.51In0.49P multiple quantum well laser
Description:
We report the fabrication of high quality Ga0.
8In0.
2As/GaAs/Ga0.
51In0.
49P multiple quantum well laser emitting at 0.
98 μm grown by low pressure metalorganic chemical vapor deposition.
Continuous wave operation with output power of 500 mW per facet was achieved at room temperature for a broad area laser with 130 μm width and 300 μm cavity length.
This is an unusually high value of output power for this wavelength laser in this material system.
The differential quantum efficiency exceeded 75% with excellent homogeneity and uniformity.
The characteristic temperature, T0 was in the range of 120–130 K.
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