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Growth of Aluminum Nitride Films on Silicon by Electron-Cyclotron-Resonance-Assisted Molecular Beam Epitaxy
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Aluminum nitride thin films have been prepared on silicon substrates by electron-cyclotron-resonance plasma-assisted molecular beam epitaxy (ECR-MBE). Epitaxial AlN films have been obtained by Al evaporation and 250 eV nitrogen ion irradiation on a clean Si surface at 700°C. AlN films with two kinds of crystal orientations were grown epitaxially on Si(111). The dominant one is AlN (0001)//Si(111); AlN[011̄0]//Si[112̄] and the another one is AlN(011̄0)//Si(111); AlN[0001]//Si[112̄].
Title: Growth of Aluminum Nitride Films on Silicon by Electron-Cyclotron-Resonance-Assisted Molecular Beam Epitaxy
Description:
Aluminum nitride thin films have been prepared on silicon substrates by electron-cyclotron-resonance plasma-assisted molecular beam epitaxy (ECR-MBE).
Epitaxial AlN films have been obtained by Al evaporation and 250 eV nitrogen ion irradiation on a clean Si surface at 700°C.
AlN films with two kinds of crystal orientations were grown epitaxially on Si(111).
The dominant one is AlN (0001)//Si(111); AlN[011̄0]//Si[112̄] and the another one is AlN(011̄0)//Si(111); AlN[0001]//Si[112̄].
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