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Effects of Indium Depositions on Porous Silicon Nanostructure (PSN)
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The effects of Indium doped on Porous Silicon Nanostructure (PSN) have been studied.
The Electroluminescence studies on Indium-doped porous silicon nanostructure (In:PSN) are
presented. The main objective of this paper is study the EL effects of Indium doping on PSN.
Porous silicon nanostructure layers have been formed by anodically etching unpolished p-type Si
[100] wafer with surface resistivity of 1-10 ohm cm-1 in Hydroflouric (HF) solution at 1:1 ratio of
Ethanol. Indium (In) was doped on PSN using cathodic electrodeposition composed of InCl3 and
ethanol electrolythe. A diode structure has been fabricated comprising semi-transparent
Au/In:PSN/p-Si substrate/Al ohmic contact electrode to observe the EL spectra. The In:PSN device
shows increasing on EL and PL Intensity as well as blue-shift EL and PL spectrum is observed.
Possible reasons for the enhancement will be discussed. Technological application of PSN as a light
emitter would have significant impact on numerous technologies such as display panels or
integrated circuits with optoelectronic devices (IO) on board and sensors.
Trans Tech Publications, Ltd.
Title: Effects of Indium Depositions on Porous Silicon Nanostructure (PSN)
Description:
The effects of Indium doped on Porous Silicon Nanostructure (PSN) have been studied.
The Electroluminescence studies on Indium-doped porous silicon nanostructure (In:PSN) are
presented.
The main objective of this paper is study the EL effects of Indium doping on PSN.
Porous silicon nanostructure layers have been formed by anodically etching unpolished p-type Si
[100] wafer with surface resistivity of 1-10 ohm cm-1 in Hydroflouric (HF) solution at 1:1 ratio of
Ethanol.
Indium (In) was doped on PSN using cathodic electrodeposition composed of InCl3 and
ethanol electrolythe.
A diode structure has been fabricated comprising semi-transparent
Au/In:PSN/p-Si substrate/Al ohmic contact electrode to observe the EL spectra.
The In:PSN device
shows increasing on EL and PL Intensity as well as blue-shift EL and PL spectrum is observed.
Possible reasons for the enhancement will be discussed.
Technological application of PSN as a light
emitter would have significant impact on numerous technologies such as display panels or
integrated circuits with optoelectronic devices (IO) on board and sensors.
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