Search engine for discovering works of Art, research articles, and books related to Art and Culture
Javascript must be enabled to continue!
Research on the relationship between ideality factor and number of units of GaN-based high voltage light-emitting diode
View through CrossRef
Ideality factor can reflect the current, the carrier leakage, and the phenomenon of non-radiative recombination in light-emitting diode (LED). For the problem of ideality factor from current report about GaN-based LED, the value of ideality factor n is calculated by using the I-V curve fitting of high voltage LED. And the relationship between the ideality factor and the number of units is series in 12, 19, 51 and 80 V GaN-based high-voltage LED are discussed. In addition, the relationship between ideality factor and spectral half width (FWHM) is analyzed, and the impact of current crowding effect on the ideality factor is also studied. Results show that the ideality factor n increases nearly linearly with the number of units in series, indicating that the ideality factor n of high voltage LED is composed of its series units. It is a valuable result for understanding the ideality factor of GaN-based high voltage LED.
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Title: Research on the relationship between ideality factor and number of units of GaN-based high voltage light-emitting diode
Description:
Ideality factor can reflect the current, the carrier leakage, and the phenomenon of non-radiative recombination in light-emitting diode (LED).
For the problem of ideality factor from current report about GaN-based LED, the value of ideality factor n is calculated by using the I-V curve fitting of high voltage LED.
And the relationship between the ideality factor and the number of units is series in 12, 19, 51 and 80 V GaN-based high-voltage LED are discussed.
In addition, the relationship between ideality factor and spectral half width (FWHM) is analyzed, and the impact of current crowding effect on the ideality factor is also studied.
Results show that the ideality factor n increases nearly linearly with the number of units in series, indicating that the ideality factor n of high voltage LED is composed of its series units.
It is a valuable result for understanding the ideality factor of GaN-based high voltage LED.
Related Results
Highmobility AlGaN/GaN high electronic mobility transistors on GaN homo-substrates
Highmobility AlGaN/GaN high electronic mobility transistors on GaN homo-substrates
Gallium nitride (GaN) has great potential applications in high-power and high-frequency electrical devices due to its superior physical properties.High dislocation density of GaN g...
Studies on the Influences of i-GaN, n-GaN, p-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors
Studies on the Influences of i-GaN, n-GaN, p-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors
Systematic studies were performed on the influence of different cap layers of i-GaN, n-GaN, p-GaN and InGaN on AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on sapphi...
The effect of ITO annealing on electrical characteristic of GaN based LED
The effect of ITO annealing on electrical characteristic of GaN based LED
In the recent years，more and more light-emitting diodes use indium tin oxide (ITO) as the current spreading layer. But if there is not any treatment, the electrical properties of l...
Embeded photonic crystal at the interface of p-GaN and Ag reflector to improve light extraction of GaN-based flip-chip light-emitting diode
Embeded photonic crystal at the interface of p-GaN and Ag reflector to improve light extraction of GaN-based flip-chip light-emitting diode
In this experiment, a flip-chip light-emitting diode with photonic crystal was fabricated at the interface of p-GaN and Ag reflector via nanospheres lithography technique. In this ...
Microcontroller-Based Thermoelectrically Stabilized Laser Diode System
Microcontroller-Based Thermoelectrically Stabilized Laser Diode System
This work aims to describe the development of a prototype laser diode system along with its driver circuit and a stable microcontroller-based thermo-electric cooling system. The la...
Electrical and Structural Properties of All-Sputtered Al/SiO2/p-GaN MOS Schottky Diode
Electrical and Structural Properties of All-Sputtered Al/SiO2/p-GaN MOS Schottky Diode
The all-sputtered Al/SiO2/p-GaN metal-oxide-semiconductor (MOS) Schottky diode was fabricated by the cost-effective radio-frequency sputtering technique with a cermet target at 400...
Novel approaches for robust polaritonics
Novel approaches for robust polaritonics
The possibility of having low-threshold, inversion-less lasers, makinguse of the macroscopic occupation, of the low density of states, at thebottom of the lower polariton branch, h...
Strain measurements at
AlGaN/GaN
HEMT
structures on Silicon substrates
Strain measurements at
AlGaN/GaN
HEMT
structures on Silicon substrates
High Electron Mobility Transistors (HEMTs) based on AlGaN/GaN are of great interest due to their high electrical performance and the related applications. The high carrier density,...