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Proton-Induced Current Collapse in Al0.17Ga0.83N/GaN HEMTs on Si substrates
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The electrical and transient characteristics of Al0.17Ga0.83N/GaN high-electron-mobility transistors (HEMTs) on Si were investigated after proton irradiation. Comprehensive electrical characterization, including the transmission line method (TLM), DC I-V measurements, and pulsed transient gate-lag and drain-lag analyses, was conducted to identify the dominant degradation mechanisms. Proton irradiation-induced damage was primarily localized near the metal-semiconductor (MS) contact region rather than within the channel. Moreover, degradation under gate-lag conditions was significantly more pronounced than that under drain-lag conditions, indicating a dominant contribution from surface traps located in the AlGaN barrier layer compared to bulk traps formed in the GaN buffer layer after irradiation. These findings demonstrate that surface traps play a key role in the transient reliability degradation of AlGaN/GaN HEMTs under radiation environments and provide valuable insights for the design of radiation-hardened GaN-based devices.
Title: Proton-Induced Current Collapse in Al0.17Ga0.83N/GaN HEMTs on Si substrates
Description:
The electrical and transient characteristics of Al0.
17Ga0.
83N/GaN high-electron-mobility transistors (HEMTs) on Si were investigated after proton irradiation.
Comprehensive electrical characterization, including the transmission line method (TLM), DC I-V measurements, and pulsed transient gate-lag and drain-lag analyses, was conducted to identify the dominant degradation mechanisms.
Proton irradiation-induced damage was primarily localized near the metal-semiconductor (MS) contact region rather than within the channel.
Moreover, degradation under gate-lag conditions was significantly more pronounced than that under drain-lag conditions, indicating a dominant contribution from surface traps located in the AlGaN barrier layer compared to bulk traps formed in the GaN buffer layer after irradiation.
These findings demonstrate that surface traps play a key role in the transient reliability degradation of AlGaN/GaN HEMTs under radiation environments and provide valuable insights for the design of radiation-hardened GaN-based devices.
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