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Hole-cyclotron instability in semiconductor quantum plasmas
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The excitation of electrostatic hole-cyclotron waves generated by an externally injected electron beam in semiconductor plasmas is examined using a quantum hydrodynamic model. The quantum effects such as tunneling potential, Fermi degenerate pressure, and exchange-correlation potential are taken care of. The growth rate of the wave is analyzed on varying the parameters normalized by hole-plasma frequency, like the angle θ between propagation vector and B0∥ẑ, speed of the externally injected electron beam v0∥k, thermal temperature of the electron beam τ, external magnetic field B0∥ẑ that modifies the hole-cyclotron frequency, and finally, the semiconductor electron number density. The instability of the hole-cyclotron wave seeks its applications in semiconductor devices.
Title: Hole-cyclotron instability in semiconductor quantum plasmas
Description:
The excitation of electrostatic hole-cyclotron waves generated by an externally injected electron beam in semiconductor plasmas is examined using a quantum hydrodynamic model.
The quantum effects such as tunneling potential, Fermi degenerate pressure, and exchange-correlation potential are taken care of.
The growth rate of the wave is analyzed on varying the parameters normalized by hole-plasma frequency, like the angle θ between propagation vector and B0∥ẑ, speed of the externally injected electron beam v0∥k, thermal temperature of the electron beam τ, external magnetic field B0∥ẑ that modifies the hole-cyclotron frequency, and finally, the semiconductor electron number density.
The instability of the hole-cyclotron wave seeks its applications in semiconductor devices.
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