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Preparation and structure of CuInS2 film by the direct current triode sputtering
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CuInS2 thin films are deposited on Pyrex slide glass substrates by direct current triode sputtering using CS2 as a reactive gas and Cu/In mixed metal plate as sputtering target. The effects of substrate temperature and area ratio of Cu to In on the crystalline structure and composition of CuInS2 films are discussed under the same growth condition (0.02 Pa of CS2 partial pressure). When sputtering time is 2 h, their thickness are obtained to be 1-2 μm. The CuInS2 films are characterized by EPMA, XRD, and so on. The results show that the optimal CuInS2 films are obtained at a ratio of 1.4 and growth temperatures of 150 ℃, 250 ℃ and 350 ℃, and that these films each have a chalcopyrite structure. The content of carbon impurity in each of the as-deposited CuInS2 films is found to be about 8.9%.
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Title: Preparation and structure of CuInS2 film by the direct current triode sputtering
Description:
CuInS2 thin films are deposited on Pyrex slide glass substrates by direct current triode sputtering using CS2 as a reactive gas and Cu/In mixed metal plate as sputtering target.
The effects of substrate temperature and area ratio of Cu to In on the crystalline structure and composition of CuInS2 films are discussed under the same growth condition (0.
02 Pa of CS2 partial pressure).
When sputtering time is 2 h, their thickness are obtained to be 1-2 μm.
The CuInS2 films are characterized by EPMA, XRD, and so on.
The results show that the optimal CuInS2 films are obtained at a ratio of 1.
4 and growth temperatures of 150 ℃, 250 ℃ and 350 ℃, and that these films each have a chalcopyrite structure.
The content of carbon impurity in each of the as-deposited CuInS2 films is found to be about 8.
9%.
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