Search engine for discovering works of Art, research articles, and books related to Art and Culture
ShareThis
Javascript must be enabled to continue!

Electronic materials for solution-processed TFTs

View through CrossRef
Abstract Sol–gel processed thin-film transistors (TFTs) have emerged as a promising technology for next-generationelectronics. TFTs are widely used as switching devices in a various applications, like sensors, displays, memory, and logic circuits. The use of solution process technology offers several advantages, such as low cost, simple process, high throughput, homogeneity, and excellent compositional control. The solution-based fabrication process enables the deposition of thin films on a wide range of substrates, including flexible and curved surfaces. Recently, significant progress has been made in the field of oxide semiconductors and oxide dielectrics for solution-processed TFTs. These developments have led to improved device performance, including higher operating voltage, mobility, and on/off current ratio, among other factors. In this article, we discuss the progress made in the development of oxide semiconductors and oxide dielectrics for sol–gel processed TFTs. This study aims to present a comprehensive understanding of the latest advancements in sol–gel processed TFTs. First, we present comprehensive summary of the key parameters of solution-processed metal oxides that are critical for building high-performance thin film transistors (TFTs), including sol–gel derived binary and ternary metal oxide dielectrics and semiconductors. Following that a detailed performance analysis of solution-processed TFTs in terms of their operating voltage, mobility, and on/off current ratio (Ion/Ioff), among other factors has been summarized. Afterward, the applications of solution-processed TFTs fabricated using various techniques (e.g., spin coating, screen printing, and inkjet printing) are also discussed. We explore the function of sol–gel processed high-k dielectrics and the challenges associated with their growth for fabrication of high-performance TFTs. Finally, the future perspectives on how to improve the performance of solution-processed TFTs. Overall, this study provides valuable insights into the potential of solution-processed materials for use in next-generation portable electronics.
Title: Electronic materials for solution-processed TFTs
Description:
Abstract Sol–gel processed thin-film transistors (TFTs) have emerged as a promising technology for next-generationelectronics.
TFTs are widely used as switching devices in a various applications, like sensors, displays, memory, and logic circuits.
The use of solution process technology offers several advantages, such as low cost, simple process, high throughput, homogeneity, and excellent compositional control.
The solution-based fabrication process enables the deposition of thin films on a wide range of substrates, including flexible and curved surfaces.
Recently, significant progress has been made in the field of oxide semiconductors and oxide dielectrics for solution-processed TFTs.
These developments have led to improved device performance, including higher operating voltage, mobility, and on/off current ratio, among other factors.
In this article, we discuss the progress made in the development of oxide semiconductors and oxide dielectrics for sol–gel processed TFTs.
This study aims to present a comprehensive understanding of the latest advancements in sol–gel processed TFTs.
First, we present comprehensive summary of the key parameters of solution-processed metal oxides that are critical for building high-performance thin film transistors (TFTs), including sol–gel derived binary and ternary metal oxide dielectrics and semiconductors.
Following that a detailed performance analysis of solution-processed TFTs in terms of their operating voltage, mobility, and on/off current ratio (Ion/Ioff), among other factors has been summarized.
Afterward, the applications of solution-processed TFTs fabricated using various techniques (e.
g.
, spin coating, screen printing, and inkjet printing) are also discussed.
We explore the function of sol–gel processed high-k dielectrics and the challenges associated with their growth for fabrication of high-performance TFTs.
Finally, the future perspectives on how to improve the performance of solution-processed TFTs.
Overall, this study provides valuable insights into the potential of solution-processed materials for use in next-generation portable electronics.

Related Results

Sustainability and ultra-processed foods: role of youth
Sustainability and ultra-processed foods: role of youth
The objective of this research is to study and look at the ways how processed food affects human and environmental health and to find alternatives to processed food.  Sustainabilit...
Sustainability and ultra-processed foods: role of youth
Sustainability and ultra-processed foods: role of youth
The objective of this research is to study and look at the ways how processed food affects human and environmental health and to find alternatives to processed food.  Sustainabilit...
Threshold voltage reliability in flexible amorphous In–Ga–ZnO TFTs under simultaneous electrical and mechanical stress
Threshold voltage reliability in flexible amorphous In–Ga–ZnO TFTs under simultaneous electrical and mechanical stress
Abstract Flexible amorphous In–Ga–ZnO (a-IGZO) thin film transistors (TFTs) have been successfully demonstrated on 50 µm thick freestanding polyimide (PI) with µ ...
Stable amorphous-silicon thin-film transistors
Stable amorphous-silicon thin-film transistors
Hydrogenated amorphous silicon, a-Si:H, prepared with the hot-wire chemical vapour deposition technique is incorporated in thin-film transistors (TFTs). High-quality TFTs are fabri...
Procedure for Western blot v1
Procedure for Western blot v1
Goal: This document has the objective of standardizing the protocol for Western blot. This technique allows the detection of specific proteins separated on polyacrylamide gel and t...
Homojunction structure amorphous oxide thin film transistors with ultra-high mobility
Homojunction structure amorphous oxide thin film transistors with ultra-high mobility
Abstract Amorphous oxide semiconductors (AOS) have unique advantages in transparent and flexible thin film transistors (TFTs) applications, compared to low-temperatu...
High Performance Amorphous IGO Thin Film Transistors Grown at Low Temperature
High Performance Amorphous IGO Thin Film Transistors Grown at Low Temperature
Polycrystalline indium gallium oxide has been widely studied in the domain of oxide thin film transistors (TFTs) due to its high mobility. However, there are few researches focus o...
Stability of hot-wire deposited amorphous-silicon thin-film transistors
Stability of hot-wire deposited amorphous-silicon thin-film transistors
For the first time hydrogenated amorphous silicon, a-Si:H, deposited with the hot-wire technique is incorporated in thin-film transistors (TFTs). Amorphous silicon was deposited at...

Back to Top