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Negative temperature dependence of electron multiplication in In0.53Ga0.47As
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Electron multiplication in In0.53Ga0.47As has been determined from photomultiplication measurements over the temperature range of 20 to 400 K for a series of p–i–n diodes. A negative temperature dependence is observed in the electron multiplication of In0.53Ga0.47As at electric fields over 200 kV/cm, contrary to the positive temperature dependence of collector multiplication previously observed in InP/In0.53Ga0.47As heterojunction bipolar transistors. The results also showed that the breakdown voltage for In0.53Ga0.47As is comparable to GaAs at room temperature, and has a weaker temperature dependence.
AIP Publishing
Title: Negative temperature dependence of electron multiplication in In0.53Ga0.47As
Description:
Electron multiplication in In0.
53Ga0.
47As has been determined from photomultiplication measurements over the temperature range of 20 to 400 K for a series of p–i–n diodes.
A negative temperature dependence is observed in the electron multiplication of In0.
53Ga0.
47As at electric fields over 200 kV/cm, contrary to the positive temperature dependence of collector multiplication previously observed in InP/In0.
53Ga0.
47As heterojunction bipolar transistors.
The results also showed that the breakdown voltage for In0.
53Ga0.
47As is comparable to GaAs at room temperature, and has a weaker temperature dependence.
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