Physical-chemical properties of advanced semiconductor materials-solid solutions of the inbv-cdte systems

According to the developed methodology with regard to the InP-CdTe, InAs-CdTe systems in initial binary compounds’ mutual solubility regions (InP and CdTe, InAs and CdTe), solid solutions (InP)x(CdTe)1-x, (InAs)x(CdTe)1-x, certified as solid substitution solutions with a cubic sphalerite structure have been obtained. X-ray micro-, electron microscopical studies as well as surface (acid-base) properties studies were performed. The concentration dependences of the studied bulk and surface properties, correlations between them were established. The use practicability of them as orienting points in searching advanced effective materials for semiconductor gas analysis is demonstrated. Practical recommendations are given concerning the use of the obtained materials (solid solutions with the lowest pHiso values) for the manufacture of measuring cells of main gas trace contamination.