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Large Thermoelectric Response of Ti-Containing Perovskite Oxides

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Nb-content dependence of the thermoelectric figure of merit, ZT of SrTiO3 at high-temperature (1000 K) is clarified using heavily Nb-doped SrTiO3 epitaxial films, which were grown on (100)-face of LaAlO3 single crystal substrates by a pulsed-laser deposition. Carrier concentration, Hall mobility, Seebeck coefficient, and thermal conductivity of Nb-doped SrTiO3 epitaxial films were experimentally evaluated at 1000 K with an aid of theoretical analysis. ZT reached 0.37 (20%-Nb-doped SrTiO3 epitaxial film) at 1000 K, which is the largest value among n-type oxide semiconductors ever reported.
Title: Large Thermoelectric Response of Ti-Containing Perovskite Oxides
Description:
Nb-content dependence of the thermoelectric figure of merit, ZT of SrTiO3 at high-temperature (1000 K) is clarified using heavily Nb-doped SrTiO3 epitaxial films, which were grown on (100)-face of LaAlO3 single crystal substrates by a pulsed-laser deposition.
Carrier concentration, Hall mobility, Seebeck coefficient, and thermal conductivity of Nb-doped SrTiO3 epitaxial films were experimentally evaluated at 1000 K with an aid of theoretical analysis.
ZT reached 0.
37 (20%-Nb-doped SrTiO3 epitaxial film) at 1000 K, which is the largest value among n-type oxide semiconductors ever reported.

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