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Effect of Preparation Conditions on the Properties of CdSe Microcrystal-Doped SiO2 Glass Thin Films Prepared by RF-Sputtering
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CdSe microcrystal-doped SiO2 glass thin films were prepared by an RF-sputtering technique under various conditions. The mean size and the size distribution of microcrystals in the films were found to be controlled by the sputtering conditions. A marked narrowing of size distribution of CdSe microcrystals was achieved in the films, compared to the melt-derived CdSe microcrystal-doped glasses. The relationship of the blue shift of the absorption edge to the reciprocal square of the mean particle size deviated from those theoretically deduced from the exciton confinement and the electron-hole confinement, and this can be deduced from the significant contribution of the Coulomb force between electrons
and holes.
Title: Effect of Preparation Conditions on the Properties of CdSe Microcrystal-Doped SiO2 Glass Thin Films Prepared by RF-Sputtering
Description:
CdSe microcrystal-doped SiO2 glass thin films were prepared by an RF-sputtering technique under various conditions.
The mean size and the size distribution of microcrystals in the films were found to be controlled by the sputtering conditions.
A marked narrowing of size distribution of CdSe microcrystals was achieved in the films, compared to the melt-derived CdSe microcrystal-doped glasses.
The relationship of the blue shift of the absorption edge to the reciprocal square of the mean particle size deviated from those theoretically deduced from the exciton confinement and the electron-hole confinement, and this can be deduced from the significant contribution of the Coulomb force between electrons
and holes.
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