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Metalorganic Chemical Vapor Deposition of BaTiO3 Films on MgO(100)

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BaTiO3 thin films were prepared on MgO(100) substrates by chemical vapor deposition using barium β-diketonate {Ba(C11H19O2)2} and titanium tetraisopropoxide {Ti[OCH(CH3)2]4} as metalorganic precursors. BaTiO3 films deposited at 800-1000°C showed prominent a-axis orientation perpendicular to the substrate surface. The deposition rate of these films was 1.0-1.2 µm/h. The rocking curve of BaTiO3(200) reflection from the film deposited at 800°C indicated strong crystallographic orientation. The epitaxial relationship between the film and the substrate was found by X-ray pole figure analysis. The relative dielectric constant of a polycrystalline BaTiO3 film prepared on a Pt(100)/MgO(100) substrate at 800°C was 1040 (10 kHz, 20 V/cm).
Title: Metalorganic Chemical Vapor Deposition of BaTiO3 Films on MgO(100)
Description:
BaTiO3 thin films were prepared on MgO(100) substrates by chemical vapor deposition using barium β-diketonate {Ba(C11H19O2)2} and titanium tetraisopropoxide {Ti[OCH(CH3)2]4} as metalorganic precursors.
BaTiO3 films deposited at 800-1000°C showed prominent a-axis orientation perpendicular to the substrate surface.
The deposition rate of these films was 1.
0-1.
2 µm/h.
The rocking curve of BaTiO3(200) reflection from the film deposited at 800°C indicated strong crystallographic orientation.
The epitaxial relationship between the film and the substrate was found by X-ray pole figure analysis.
The relative dielectric constant of a polycrystalline BaTiO3 film prepared on a Pt(100)/MgO(100) substrate at 800°C was 1040 (10 kHz, 20 V/cm).

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