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Surface chemical reactions on In0.53Ga0.47As
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Dark currents on In0.53Ga0.47As mesa photodiodes can be reduced significantly by treating the surfaces with H2SO4:H2O2:XH2O (10≤X≤500) instead of the usual bromine-methanol etch. Using spectroscopic ellipsometry we show that peroxide etches form porous amorphous As or oxide overlayers according to whether the pH values are less than or greater than ∼3. The identity of these overlayers is established by their dielectric response and chemical reactivity.
Title: Surface chemical reactions on In0.53Ga0.47As
Description:
Dark currents on In0.
53Ga0.
47As mesa photodiodes can be reduced significantly by treating the surfaces with H2SO4:H2O2:XH2O (10≤X≤500) instead of the usual bromine-methanol etch.
Using spectroscopic ellipsometry we show that peroxide etches form porous amorphous As or oxide overlayers according to whether the pH values are less than or greater than ∼3.
The identity of these overlayers is established by their dielectric response and chemical reactivity.
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