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Elaboration of Core Si/Shell SiC Nanowires
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Silicon nanowires obtained by a top-down approach have been carburized at high temperature and atmospheric pressure with two different gaseous precursors: CH4 and C3H8. These processes reveal core silicon / shell 3C-SiC nanowires. After being characterized by SEM, FIB-SEM and TEM microscopies, the 3C-SiC layer has been used as seed layer for the growth of epitaxial 3C-SiC on the nanowires. Preferential growth of 3C-SiC on the sidewalls of nanowires has been observed. Thanks to the biocompatibility of SiC compared to Si, this layer could act as a protective shell for biosensors based on Si nanowires transistor.
Trans Tech Publications, Ltd.
Title: Elaboration of Core Si/Shell SiC Nanowires
Description:
Silicon nanowires obtained by a top-down approach have been carburized at high temperature and atmospheric pressure with two different gaseous precursors: CH4 and C3H8.
These processes reveal core silicon / shell 3C-SiC nanowires.
After being characterized by SEM, FIB-SEM and TEM microscopies, the 3C-SiC layer has been used as seed layer for the growth of epitaxial 3C-SiC on the nanowires.
Preferential growth of 3C-SiC on the sidewalls of nanowires has been observed.
Thanks to the biocompatibility of SiC compared to Si, this layer could act as a protective shell for biosensors based on Si nanowires transistor.
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