Javascript must be enabled to continue!
Epitaxial Growth
View through CrossRef
Abstract
The sections in this article are
Introduction
The Epitaxial Process: General Features
Surface Thermodynamics and Surface Structure
Surface Transport and Incorporation
Growth Behaviors
Chemical Vapor Deposition: Technology and Issues
Reactors: Mass, Fluid, and Thermal Transport
Fluid Behavior and Reactor Design
Mass and Thermal Transport
Gas Phase and Surface Chemistry
Liquid Phase Epitaxy (
LPE
) Technology
LPE
Growth Procedures
Molecular Beam Epitaxy (
MBE
) Technology
Specific Epitaxial Systems: Materials and Growth Issues
Silicon Chemical Vapor Deposition
Silicon Chemical Vapor Deposition: Surface and Reactor Considerations
Silicon Chemical Vapor Deposition: Growth Chemistry
Heterojunction Formation
Impurity Incorporation
Ga
As
MBE
Growth of
Al
Ga
As
by
LPE
In
P
Metal Organic Vapor Phase Epitaxy (
MOVPE
)
Acknowledgements
Title: Epitaxial Growth
Description:
Abstract
The sections in this article are
Introduction
The Epitaxial Process: General Features
Surface Thermodynamics and Surface Structure
Surface Transport and Incorporation
Growth Behaviors
Chemical Vapor Deposition: Technology and Issues
Reactors: Mass, Fluid, and Thermal Transport
Fluid Behavior and Reactor Design
Mass and Thermal Transport
Gas Phase and Surface Chemistry
Liquid Phase Epitaxy (
LPE
) Technology
LPE
Growth Procedures
Molecular Beam Epitaxy (
MBE
) Technology
Specific Epitaxial Systems: Materials and Growth Issues
Silicon Chemical Vapor Deposition
Silicon Chemical Vapor Deposition: Surface and Reactor Considerations
Silicon Chemical Vapor Deposition: Growth Chemistry
Heterojunction Formation
Impurity Incorporation
Ga
As
MBE
Growth of
Al
Ga
As
by
LPE
In
P
Metal Organic Vapor Phase Epitaxy (
MOVPE
)
Acknowledgements.
Related Results
High‐Throughput Design of Epitaxial Orientation for Functional Thin Films
High‐Throughput Design of Epitaxial Orientation for Functional Thin Films
AbstractThe structure and properties of functional thin films are highly sensitive to their epitaxial orientations. However, the orientation of the thin film is typically constrain...
Epitaxial Free Energy and Stability under Epitaxial Strain
Epitaxial Free Energy and Stability under Epitaxial Strain
First-principles ground-state total-energy calculations show that tetragonal crystals generally have two structures at which the energy is a minimum, which are appropriately called...
Application of a Two-Step Growth to the Formation of Epitaxial CoSi2 Films on Si(001) Surfaces: Comparative Study using Reactive Deposition Epitaxy
Application of a Two-Step Growth to the Formation of Epitaxial CoSi2 Films on Si(001) Surfaces: Comparative Study using Reactive Deposition Epitaxy
Epitaxial growth of 20-nm-thick CoSi2 films on Si(001) surfaces has been investigated for a two-step growth and reactive deposition epitaxy (RDE) at growth temperatures of 320–680°...
Towards the Fabrication of Ultra-Thin SOI on Si (001) using Epitaxial Oxide and Epitaxial Semiconductor Growth Processes
Towards the Fabrication of Ultra-Thin SOI on Si (001) using Epitaxial Oxide and Epitaxial Semiconductor Growth Processes
Silicon on insulator (SOI) substrates will be required to reduce capacitive coupling and other parasitic effects as device scaling continues. ITRS projections point to a future ...
Growth Behavior and Mechanism of Alkyl-Desorption-Limited Epitaxial Growth of GaAs on Exactly Oriented and Vicinal Substrates
Growth Behavior and Mechanism of Alkyl-Desorption-Limited Epitaxial Growth of GaAs on Exactly Oriented and Vicinal Substrates
New atomically controlled epitaxial growth, called alkyl-desorption-limited epitaxial (ADLE) growth, is studied on (001) exactly oriented and vicinal GaAs substrates. In ADLE gro...
Study of Si–Ge Interdiffusion in Laser Recrystallization of Ge Epitaxial Film on Si Substrate
Study of Si–Ge Interdiffusion in Laser Recrystallization of Ge Epitaxial Film on Si Substrate
Direct epitaxial growth of germanium (Ge) film on silicon (Si) substrate (GOSS) holds great potential in micro-electronics and optoelectronics. However, due to the 4.2% lattice mis...
Characterization of Epitaxial Films of Layered Materials Using Moiré Images of Scanning Tunneling Microscope
Characterization of Epitaxial Films of Layered Materials Using Moiré Images of Scanning Tunneling Microscope
Moiré-type modulated patterns have been observed in scanning tunneling microscope (STM) images of ultrathin epitaxial films of MoSe2 grown on MoS2 substrates, which arise from the ...
The Optimal Public Expenditure in Developing Countries
The Optimal Public Expenditure in Developing Countries
Many researchers believe that government expenditures promote economic growth at the first development stage. However, as public expenditure becomes too large, countries will suffe...

