Javascript must be enabled to continue!
Superconducting pulse conserving logic and Josephson-SRAM
View through CrossRef
Superconducting digital pulse-conserving logic and Josephson static random access memory (JSRAM) memory together enable scalable circuits with energy efficiency 100× beyond leading-node CMOS. Circuit designs support high throughput and low latency when implemented in an advanced fabrication stack with high-critical-current-density Josephson junctions of 1000 μA/μm2. Pulse-conserving logic produces one single-flux-quantum output for each input and includes a three-input, three-output gate producing logical or3, majority3, and and3. Gate macros using dual-rail data encoding eliminate inversion latency and produce efficient implementations of all standard logic functions. A full adder using 70 Josephson junctions has a carry-out latency of 5 ps corresponding to an effective 12 levels of logic at 30 GHz. JSRAM memory uses single-flux-quantum signals throughout an active array to achieve throughput at the same clock rate as the logic. The unit cell has eight Josephson junctions, a signal propagation latency of 1 ps, and a footprint of 2 μm2. Projected density of JSRAM is 4 MB/cm2, and computational density of pulse-conserving logic is on par with leading node CMOS accounting for power densities and clock rates.
Title: Superconducting pulse conserving logic and Josephson-SRAM
Description:
Superconducting digital pulse-conserving logic and Josephson static random access memory (JSRAM) memory together enable scalable circuits with energy efficiency 100× beyond leading-node CMOS.
Circuit designs support high throughput and low latency when implemented in an advanced fabrication stack with high-critical-current-density Josephson junctions of 1000 μA/μm2.
Pulse-conserving logic produces one single-flux-quantum output for each input and includes a three-input, three-output gate producing logical or3, majority3, and and3.
Gate macros using dual-rail data encoding eliminate inversion latency and produce efficient implementations of all standard logic functions.
A full adder using 70 Josephson junctions has a carry-out latency of 5 ps corresponding to an effective 12 levels of logic at 30 GHz.
JSRAM memory uses single-flux-quantum signals throughout an active array to achieve throughput at the same clock rate as the logic.
The unit cell has eight Josephson junctions, a signal propagation latency of 1 ps, and a footprint of 2 μm2.
Projected density of JSRAM is 4 MB/cm2, and computational density of pulse-conserving logic is on par with leading node CMOS accounting for power densities and clock rates.
Related Results
ANALYSIS OF STATIC NOISE MARGIN FOR NOVEL POWER GATED SRAM
ANALYSIS OF STATIC NOISE MARGIN FOR NOVEL POWER GATED SRAM
Data stability is one of the important parameter of SRAM with scaling of CMOS technology. However the move to nanometer technology not only nodes has increased, but the variability...
Low Power 8T and 9T SRAM Cell Configurations using Improved SVL (I-SVL)
Low Power 8T and 9T SRAM Cell Configurations using Improved SVL (I-SVL)
Background/Objectives: Memory is important in today's world of electronic equipment, such as processors and portable electronics, thanks to the use of static random-access memory (...
Vortex pattern in three-dimensional mesoscopic superconducting rings
Vortex pattern in three-dimensional mesoscopic superconducting rings
Vortex structures in a mesoscopic a superconducting ring, which is in the magnetic field generated by a circular electric current, are investigated based on the phenomenological Gi...
Superconductors
Superconductors
AbstractThe article contains sections titled:1.Introduction2.Principles2.1.Electrical Resistance and Thermal Conductivity2.2.Behavior in Magnetic Fields2.3.Critical Current2.4.Ener...
Superconducting Proximity Effect in Magnetic Molecules
Superconducting Proximity Effect in Magnetic Molecules
<p>We studied the transport through magnetic molecules (MM) coupled to superconducting (S), ferromagnetic (F) and normal (N) leads, with the aim of investigating the interpla...
Design and Performance Evaluation of SRAM Processing in Memory Using TSMC 90nm CMOS Technology
Design and Performance Evaluation of SRAM Processing in Memory Using TSMC 90nm CMOS Technology
Memory is a crucial component in electronic circuits, especially in embedded devices. With the rapid development of AI and Machine Learning, the demand for processing large amounts...
Ultra-Low Power 9T FinFET Based SRAM Cell for IoT Applications
Ultra-Low Power 9T FinFET Based SRAM Cell for IoT Applications
The rapid proliferation of Internet of Things (IoT) devices has escalated the demand for energy-efficient memory solutions. The development of SRAM (Static Random-Access Memory) ha...
Preparation, microstructure of B film and its applications in MgB2 superconducting Josephson junction
Preparation, microstructure of B film and its applications in MgB2 superconducting Josephson junction
Magnesium diboride is a binary compound with a simple AlB2 type crystal structure and a high-Tc (nearly 40 K) superconductor. The rather high Tc value and the specific properties m...

