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In Situ Transmission Electron Microscopy Study of Molybdenum Oxide Contacts for Silicon Solar Cells
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In this study, a molybdenum oxide (MoOx) and aluminum (Al) contact structure for crystalline silicon (c‐Si) solar cells is investigated using a combination of transmission line measurements (TLM) and in‐situ transmission electron microscopy (TEM). Cross‐sectional high‐resolution TEM (HRTEM) micrographs reveal a ≈2 nm silicon oxide (SiOx) interlayer at c‐Si/MoOx interface in the as‐deposited state, indicating that formation of SiOx occurs during deposition of MoOx. Moreover, oxygen diffusion takes place from MoOx toward Al resulting in the formation of a ≈2–3 nm aluminum oxide (AlOx) interlayer at the MoOx/Al interface. Overall, it is observed that MoOx/Al contact is relatively stable upon annealing up to 200 °C and still retains ohmic transport with sufficiently low contact resistivity.
Title: In Situ Transmission Electron Microscopy Study of Molybdenum Oxide Contacts for Silicon Solar Cells
Description:
In this study, a molybdenum oxide (MoOx) and aluminum (Al) contact structure for crystalline silicon (c‐Si) solar cells is investigated using a combination of transmission line measurements (TLM) and in‐situ transmission electron microscopy (TEM).
Cross‐sectional high‐resolution TEM (HRTEM) micrographs reveal a ≈2 nm silicon oxide (SiOx) interlayer at c‐Si/MoOx interface in the as‐deposited state, indicating that formation of SiOx occurs during deposition of MoOx.
Moreover, oxygen diffusion takes place from MoOx toward Al resulting in the formation of a ≈2–3 nm aluminum oxide (AlOx) interlayer at the MoOx/Al interface.
Overall, it is observed that MoOx/Al contact is relatively stable upon annealing up to 200 °C and still retains ohmic transport with sufficiently low contact resistivity.
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