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Material Design of GaN-Based Ferromagnetic Diluted Magnetic Semiconductors
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Material design of GaN-based ferromagnetic diluted magnetic semiconductors is given based on ab initio calculations within the local spin density approximation. The electronic structure of 3d-transition-metal-atom-doped GaN was calculated by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation. It was found that the ferromagnetic ground states were readily achievable in V-, Cr- or Mn-doped GaN without any additional carrier doping treatments. A simple explanation on the systematic behavior of the magnetic states in GaN-based diluted magnetic semiconductors is also given.
Title: Material Design of GaN-Based Ferromagnetic Diluted Magnetic Semiconductors
Description:
Material design of GaN-based ferromagnetic diluted magnetic semiconductors is given based on ab initio calculations within the local spin density approximation.
The electronic structure of 3d-transition-metal-atom-doped GaN was calculated by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation.
It was found that the ferromagnetic ground states were readily achievable in V-, Cr- or Mn-doped GaN without any additional carrier doping treatments.
A simple explanation on the systematic behavior of the magnetic states in GaN-based diluted magnetic semiconductors is also given.
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