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Defect Analysis in Bonded and H + Split Silicon-on-Insulator Wafers by Photoluminescence Spectroscopy and Transmission Electron Microscopy
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Defects in silicon-on-insulator wafers fabricated by bonding and H+
splitting technique
(Unibond wafers [Unibond is a registered trademark of SOITEC.]) were characterized by photoluminescence (PL)
spectroscopy
together with transmission electron microscopy (TEM).
PL from the superficial Si layer and that from the supporting substrate
were separately
analyzed using UV and visible light as an excitation source, respectively.
The deep-level PL band appeared around 0.8 eV both in the superficial
layer and the
substrate with a spectral shape similar to that often observed in oxygen
precipitated Si
crystals.
Correspondingly, TEM observation revealed precipitates and related
defects.
These results allow us to conclude that the defects in Unibond wafers originate in
oxygen precipitation during the two-step annealing in the wafer
fabrication process.
Title: Defect Analysis in Bonded and H + Split Silicon-on-Insulator Wafers by Photoluminescence Spectroscopy and Transmission Electron Microscopy
Description:
Defects in silicon-on-insulator wafers fabricated by bonding and H+
splitting technique
(Unibond wafers [Unibond is a registered trademark of SOITEC.
]) were characterized by photoluminescence (PL)
spectroscopy
together with transmission electron microscopy (TEM).
PL from the superficial Si layer and that from the supporting substrate
were separately
analyzed using UV and visible light as an excitation source, respectively.
The deep-level PL band appeared around 0.
8 eV both in the superficial
layer and the
substrate with a spectral shape similar to that often observed in oxygen
precipitated Si
crystals.
Correspondingly, TEM observation revealed precipitates and related
defects.
These results allow us to conclude that the defects in Unibond wafers originate in
oxygen precipitation during the two-step annealing in the wafer
fabrication process.
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