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Single layer aligned semiconducting single-walled carbon nanotube array with high linear density

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Abstract Highly ordered semiconducting single-walled carbon nanotubes(sc-SWCNTs) array with high purity, high linear density and controllable manner is strongly desired for carbon-based integrated circuits, yet it remains a big challenge. Herein, close-packed single layered and controllably aligned sc-SWCNTs arrays were obtained through dielectrophoresis using a high purity sc-SWCNT dispersion. Under optimized condition of length and average number of interconnecting junctions across the channel full of aligned sc-SWCNTs, field effect transistors (FETs) with high performance were achieved with both a high on/off current ratio and large carrier mobility. Based on the optimized channel length, by systematically optimizing the dielectrophoresis parameters of the frequency and duration of applied AC voltage (V pp), the highly ordered sc-SWCNTs arrays with an ultra-high linear density of 54 ± 2 tubes μm−1 showed relatively high device performance of FET. The fabrication process optimized in this report can be further extended and applied in large-area, low-cost carbon-based integrated circuits.
Title: Single layer aligned semiconducting single-walled carbon nanotube array with high linear density
Description:
Abstract Highly ordered semiconducting single-walled carbon nanotubes(sc-SWCNTs) array with high purity, high linear density and controllable manner is strongly desired for carbon-based integrated circuits, yet it remains a big challenge.
Herein, close-packed single layered and controllably aligned sc-SWCNTs arrays were obtained through dielectrophoresis using a high purity sc-SWCNT dispersion.
Under optimized condition of length and average number of interconnecting junctions across the channel full of aligned sc-SWCNTs, field effect transistors (FETs) with high performance were achieved with both a high on/off current ratio and large carrier mobility.
Based on the optimized channel length, by systematically optimizing the dielectrophoresis parameters of the frequency and duration of applied AC voltage (V pp), the highly ordered sc-SWCNTs arrays with an ultra-high linear density of 54 ± 2 tubes μm−1 showed relatively high device performance of FET.
The fabrication process optimized in this report can be further extended and applied in large-area, low-cost carbon-based integrated circuits.

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