Javascript must be enabled to continue!
Sram in krivda v kratki zgodbi »Marija, pomagaj« Suzane Tratnik
View through CrossRef
Afekti in emocije so že od antike naprej prepoznani kot bistveni del literarne izkušnje, a med prevlado strukturalizma so bili izključeni iz obravnave pripovedne literature. Izrecni interes zanje se je v naratoloških diskurzih pojavil šele v zadnjih desetletjih z nastajajočo paradigmo sodobnih študij afekta. Pri tem so svojo vlogo odigrali različni vplivi, izročilo pojmov v poetiki, retoriki in psihoanalizi, novejši nevroznanstveni, kognitivni in evolucijski pristopi k pripovedi ter še posebej feministična naratologija in kvirovske teoretske konceptualizacije občutij, v zadnjem času pa tudi deleuzovska pojmovanja afekta. V članku se opiram na sinkretični model pripovednega svetotvorja (narrative worldmaking), ki ga je v dialogu z naštetimi vplivi ter upoštevanjem Paula Ricoeura in Bruna Latoura razvila Claudia Breger. V svojem branju kratke zgodbe »Marija, pomagaj« iz knjige Noben glas (2016) sodobne pisateljice in lezbične aktivistke Suzane Tratnik skušam v procesu pripovednega svetotvorja sondirati pripovedno produktivnost sramu in krivde kot družbenih afektov ter osvetliti tip bralskega angažmaja, h kateremu vabi njen diskurz.
The Research Center of the Slovenian Academy of Sciences and Arts (ZRC SAZU)
Title: Sram in krivda v kratki zgodbi »Marija, pomagaj« Suzane Tratnik
Description:
Afekti in emocije so že od antike naprej prepoznani kot bistveni del literarne izkušnje, a med prevlado strukturalizma so bili izključeni iz obravnave pripovedne literature.
Izrecni interes zanje se je v naratoloških diskurzih pojavil šele v zadnjih desetletjih z nastajajočo paradigmo sodobnih študij afekta.
Pri tem so svojo vlogo odigrali različni vplivi, izročilo pojmov v poetiki, retoriki in psihoanalizi, novejši nevroznanstveni, kognitivni in evolucijski pristopi k pripovedi ter še posebej feministična naratologija in kvirovske teoretske konceptualizacije občutij, v zadnjem času pa tudi deleuzovska pojmovanja afekta.
V članku se opiram na sinkretični model pripovednega svetotvorja (narrative worldmaking), ki ga je v dialogu z naštetimi vplivi ter upoštevanjem Paula Ricoeura in Bruna Latoura razvila Claudia Breger.
V svojem branju kratke zgodbe »Marija, pomagaj« iz knjige Noben glas (2016) sodobne pisateljice in lezbične aktivistke Suzane Tratnik skušam v procesu pripovednega svetotvorja sondirati pripovedno produktivnost sramu in krivde kot družbenih afektov ter osvetliti tip bralskega angažmaja, h kateremu vabi njen diskurz.
Related Results
A 7T SECURITY ORIENTED SRAM BITCELL USING VLSI
A 7T SECURITY ORIENTED SRAM BITCELL USING VLSI
Power analysis (PA) attacks have become a serious threat to security systems by enabling secret data extraction through the analysis of the current consumed by the power supply of ...
ANALYSIS OF STATIC NOISE MARGIN FOR NOVEL POWER GATED SRAM
ANALYSIS OF STATIC NOISE MARGIN FOR NOVEL POWER GATED SRAM
Data stability is one of the important parameter of SRAM with scaling of CMOS technology. However the move to nanometer technology not only nodes has increased, but the variability...
Design, Testing, and Validation of SRAM Cells: From 6T to 10T Based on Identified Parameters
Design, Testing, and Validation of SRAM Cells: From 6T to 10T Based on Identified Parameters
Static Random Access Memory (SRAM) technology is the latest technology must advance to satisfy the high-speed performance and low power consumption requirements of contemporary dev...
EE-TCAM: An Energy-Efficient SRAM-Based TCAM on FPGA
EE-TCAM: An Energy-Efficient SRAM-Based TCAM on FPGA
Ternary content-addressable memories (TCAMs) are used to design high-speed search engines. TCAM is implemented on application-specific integrated circuit (native TCAMs) and field-p...
Low Power 8T and 9T SRAM Cell Configurations using Improved SVL (I-SVL)
Low Power 8T and 9T SRAM Cell Configurations using Improved SVL (I-SVL)
Background/Objectives: Memory is important in today's world of electronic equipment, such as processors and portable electronics, thanks to the use of static random-access memory (...
Reconfigurable In-Memory Computing Using Standard 6T SRAM for BCAM, TCAM, Similarity Indexing, and Logic-in-Memory Operations
Reconfigurable In-Memory Computing Using Standard 6T SRAM for BCAM, TCAM, Similarity Indexing, and Logic-in-Memory Operations
In-memory computing (IMC) has emerged as a promising paradigm to overcome the von Neumann bottleneck by performing computations directly within memory, thereby significantly reduci...
Performance comparison of SRAM cells in 45NM technology in the presence of a memory cell control circuit
Performance comparison of SRAM cells in 45NM technology in the presence of a memory cell control circuit
Lowering power consumption and increasing the noise margin have become the two most important aspects to be considered in SRAM design. Additionally, a stable operation with good me...
Ultra-Low Power 9T FinFET Based SRAM Cell for IoT Applications
Ultra-Low Power 9T FinFET Based SRAM Cell for IoT Applications
The rapid proliferation of Internet of Things (IoT) devices has escalated the demand for energy-efficient memory solutions. The development of SRAM (Static Random-Access Memory) ha...

