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Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes
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The effects of forming gas annealing (FGA) on the ferroelectric properties of Hf0.5Zr0.5O2 (HZO) films were examined. Although the H-incorporation during FGA degrades the ferroelectric properties of Hf0.5Zr0.5O2 films, the degree of degradation was much lower compared with other ferroelectrics, such as Pb(Zr,Ti)O3. Pt worked as a catalyst for H-incorporation, and maximum 2Pr loss of ∼40% occurred. However, the insertion of a ∼20-nm-thick TiN layer between Pt and Hf0.5Zr0.5O2 decreased the degradation to ∼12%. Hf0.5Zr0.5O2 is more resistant to degradation by FGA compared with the conventional ferroelectrics, which is a highly promising result for next-generation ferroelectric memory.
Title: Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes
Description:
The effects of forming gas annealing (FGA) on the ferroelectric properties of Hf0.
5Zr0.
5O2 (HZO) films were examined.
Although the H-incorporation during FGA degrades the ferroelectric properties of Hf0.
5Zr0.
5O2 films, the degree of degradation was much lower compared with other ferroelectrics, such as Pb(Zr,Ti)O3.
Pt worked as a catalyst for H-incorporation, and maximum 2Pr loss of ∼40% occurred.
However, the insertion of a ∼20-nm-thick TiN layer between Pt and Hf0.
5Zr0.
5O2 decreased the degradation to ∼12%.
Hf0.
5Zr0.
5O2 is more resistant to degradation by FGA compared with the conventional ferroelectrics, which is a highly promising result for next-generation ferroelectric memory.
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