Javascript must be enabled to continue!
Thermal barrier potential of a tandem mirror
View through CrossRef
The relation between the electrostatic potential and the low energy electron density under electron cyclotron resonance heating (ECRH) in the thermal barrier of a tandem mirror is investigated analytically and numerically. The distribution function of mirror trapped electrons at low energy is found to stretch out in the perpendicular direction to the magnetic field and to be well approximated by a bi-Maxwellian (T⊥≥T∥) rather than by a Maxwellian. Under this approximation it is found analytically that the conventionally used Boltzmann formula derived from the full Maxwellian plasma for the barrier depth is modified to another expression including the ratio between T⊥ and Te (central cell electron temperature). The bounce-averaged Fokker–Planck simulations show that T⊥/Te itself is a function of the potential depth and that the conventional formula is modified to q(φb−φe)=Te ln(αnc/nb) with α=1.5–1.8 depending on ECRH power. This expression agrees well with experimental results on GAMMA 10 [Phys. Rev. Lett. 55, 939 (1985)].
Title: Thermal barrier potential of a tandem mirror
Description:
The relation between the electrostatic potential and the low energy electron density under electron cyclotron resonance heating (ECRH) in the thermal barrier of a tandem mirror is investigated analytically and numerically.
The distribution function of mirror trapped electrons at low energy is found to stretch out in the perpendicular direction to the magnetic field and to be well approximated by a bi-Maxwellian (T⊥≥T∥) rather than by a Maxwellian.
Under this approximation it is found analytically that the conventionally used Boltzmann formula derived from the full Maxwellian plasma for the barrier depth is modified to another expression including the ratio between T⊥ and Te (central cell electron temperature).
The bounce-averaged Fokker–Planck simulations show that T⊥/Te itself is a function of the potential depth and that the conventional formula is modified to q(φb−φe)=Te ln(αnc/nb) with α=1.
5–1.
8 depending on ECRH power.
This expression agrees well with experimental results on GAMMA 10 [Phys.
Rev.
Lett.
55, 939 (1985)].
Related Results
Near-Surface Properties of Europa Constrained by the Galileo PPR Measurements
Near-Surface Properties of Europa Constrained by the Galileo PPR Measurements
NASA's Europa Clipper mission will characterize the current and recent surface activity of the icy-moon Europa through a wide range of remote sensing observations. In particular, t...
Experimental Study on the Structural Behavior of Secondary Barrier of MARK-III LNG CCS
Experimental Study on the Structural Behavior of Secondary Barrier of MARK-III LNG CCS
The market of LNG (Liquefied Natural Gas) carrier is remarkably expanded in the last four or five years, and lots of LNG vessels are being built in many shipyards in the world. Mem...
Barrier Polymers
Barrier Polymers
AbstractBarrier polymers are used for many packaging and protective applications. As barriers they separate a system, such as an article of food or an electronic component, from an...
Barrier Polymers
Barrier Polymers
AbstractBarrier polymers are used for many packaging and protective applications. As barriers they separate a system, such as an article of food or an electronic component, from an...
Mass spectrometry of oligosaccharides
Mass spectrometry of oligosaccharides
Abstract
I.
Introduction
162
II.
CHARACTERISTICS OF TANDEM MASS SPECTRA OF CARBOHYDRATES
163
A. Ionization of Carbohydrates
163
1. Electrospray Ionization (E...
Variable Thermal Conductivity Metamaterials Applied to Passive Thermal Control of Satellites
Variable Thermal Conductivity Metamaterials Applied to Passive Thermal Control of Satellites
Abstract
Active materials like the proposed variable thermal conductivity metamaterial enable new thermal designs and low-cost, low-power, passive thermal control. T...
Interfacial thermal conductance of gallium nitride/graphene/diamond heterostructure based on molecular dynamics simulation
Interfacial thermal conductance of gallium nitride/graphene/diamond heterostructure based on molecular dynamics simulation
<sec>Gallium nitride chips are widely used in high-frequency and high-power devices. However, thermal management is a serious challenge for gallium nitride devices. To improv...
A Comparative Study of Fixing One Barrier Varying Another Barrier for a Resonant Tunneling Diode
A Comparative Study of Fixing One Barrier Varying Another Barrier for a Resonant Tunneling Diode
In this research paper, effects of fixing one barrier and varying another barrier have been analyzed and compared for a GaAs/Al0.3Ga0.7As based double barrier resonant tunnelling d...

