Rapid prototyping of magnetic tunnel junctions with focused ion beam processes

Submicron sized Magnetic tunnel junctions (MTJs) are most often fabricated by time-consuming and expensive e-beam lithography. From a research and development perspective, a short lead time is one of the major concerns. Here, a rapid process scheme for fabrication of micrometer size MTJs with focused ion beam processes is presented. The magnetic properties of the fabricated junctions is investigated in terms of magnetic domain structure, tunnelling magnetoresistance (TMR) and coercivity, with extra attention to the effect of Ga implantation from the ion beam. In particular, the effect of the implantation on the minimum junction size and the magnetization of the sensing layer are studied. In the latter case, magnetic force microscopy and micromagnetic simulations, with the Object Oriented Micromagnetic Framework (OOMMF), are used to study the magnetization reversal. The fabricated junctions show considerable coercivity both along their hard and easy axes. Interestingly, the sensing layer exhibit two remanent states: one with a single and one with a double domain. The hard axis TMR loop has kinks at about ±20 mT which is attributed to a non-uniform lateral coercivity, where the rim of the junctions, which is subjected to Ga implantation from the flank of the ion beam, is more coercive than the unirradiated centre. The width of the coercive rim is estimated to 160 nm from the hard axis TMR loop. The easy axis TMR loop shows more coercivity than an unirradiated junction and, this too, is found to stem from the coercive rim, as seen from the simulations. It is concluded that the process scheme has three major advantages. Firstly, it has a high lateral and depth resolution – the depth resolution is enhanced by end point detection – and is capable of making junctions of sizes down towards the limit set by the width of the irradiated rim. Secondly, the most delicate process steps are preformed in unbroken vacuum enabling the use of materials prone to forming oxides in the MTJ film stack. Thirdly, the scheme is both uncomplicated and quick and makes it possible to go from design to characterization in the order of hours.