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Stranski-Krastanov Growth of InAs Quantum Dots with Narrow Size Distribution
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Coherently strained InAs quantum dots (QDs) with narrow inhomogeneous broadening were grown by molecular beam epitaxy (MBE) using the Stranski-Krastanov (SK) growth mode. The increase in the InAs dot size and decrease in the dot density were induced by surface migration enhancement due to the low arsenic pressure below 6×10-7 Torr. In addition, the low arsenic pressure and the low growth rate produced the self size-limiting effect, which was attributed to the inhibition of indium incorporation. As a result, the narrowest photoluminescence (PL) linewidth of 18.6 meV (14 K) was successfully obtained from the single InAs/GaAs QD layer.
Title: Stranski-Krastanov Growth of InAs Quantum Dots with Narrow Size Distribution
Description:
Coherently strained InAs quantum dots (QDs) with narrow inhomogeneous broadening were grown by molecular beam epitaxy (MBE) using the Stranski-Krastanov (SK) growth mode.
The increase in the InAs dot size and decrease in the dot density were induced by surface migration enhancement due to the low arsenic pressure below 6×10-7 Torr.
In addition, the low arsenic pressure and the low growth rate produced the self size-limiting effect, which was attributed to the inhibition of indium incorporation.
As a result, the narrowest photoluminescence (PL) linewidth of 18.
6 meV (14 K) was successfully obtained from the single InAs/GaAs QD layer.
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