Javascript must be enabled to continue!
Electronic structures and properties of lanthanide hexaboride nanowires
View through CrossRef
The promising usage of lanthanide hexaboride nanowires as excellent electron emitter materials is generally attributed to the intrinsic low work functions of their bulk counterparts. Most analytical models for the field enhanced electron emission phenomenon adopt an underlying presumption of little or no change to the work function of the emission materials at the nanoscale. However, such a presumption is difficult to experimentally verify because current analytical models often employ empirical parameters such as the geometrically enhancement factors and the actual field emission areas are hard to determine. Herein, we report our density functional theory study of the size-dependence and element-specificity of the electronic structures and work functions of infinitely long lanthanide hexaboride nanowires constructed with n × n × ∞ unit cells (n = 1, 2, 3, and 4). Our modeling results reveal that the distinguished metal-like electronic properties and the low work function values of the sides of most examined nanowire systems are due to the abundant 4f and 5d states from the lanthanide metal atoms positioned at the Fermi level. These work function values are found to be weakly wire-size-dependent and element-dependent across the lanthanide series. They approach to the bulk values when their lateral wire-sizes are at or above 4-unit cell wide. The presence of abundance states at the Fermi level is found to be a common feature to rationalize the work functions of reported hexaboride systems.
Title: Electronic structures and properties of lanthanide hexaboride nanowires
Description:
The promising usage of lanthanide hexaboride nanowires as excellent electron emitter materials is generally attributed to the intrinsic low work functions of their bulk counterparts.
Most analytical models for the field enhanced electron emission phenomenon adopt an underlying presumption of little or no change to the work function of the emission materials at the nanoscale.
However, such a presumption is difficult to experimentally verify because current analytical models often employ empirical parameters such as the geometrically enhancement factors and the actual field emission areas are hard to determine.
Herein, we report our density functional theory study of the size-dependence and element-specificity of the electronic structures and work functions of infinitely long lanthanide hexaboride nanowires constructed with n × n × ∞ unit cells (n = 1, 2, 3, and 4).
Our modeling results reveal that the distinguished metal-like electronic properties and the low work function values of the sides of most examined nanowire systems are due to the abundant 4f and 5d states from the lanthanide metal atoms positioned at the Fermi level.
These work function values are found to be weakly wire-size-dependent and element-dependent across the lanthanide series.
They approach to the bulk values when their lateral wire-sizes are at or above 4-unit cell wide.
The presence of abundance states at the Fermi level is found to be a common feature to rationalize the work functions of reported hexaboride systems.
Related Results
Microbial nanowires with genetically modified peptide ligands to sustainably fabricate electronic sensing devices
Microbial nanowires with genetically modified peptide ligands to sustainably fabricate electronic sensing devices
AbstractNanowires have substantial potential as the sensor component in electronic sensing devices. However, surface functionalization of traditional nanowire and nanotube material...
First-principles study of effects of quantum confinement and strain on the electronic properties of GaSb nanowires
First-principles study of effects of quantum confinement and strain on the electronic properties of GaSb nanowires
Using first-principles calculations based on density functional theory and projector augmented wave method, we investigate the electronic structures of one-dimensional wurtzite (WZ...
On-chip fabrication of lateral growth ZnO nanowire array UV sensor
On-chip fabrication of lateral growth ZnO nanowire array UV sensor
In this paper, we integrate nano technology into traditional microelectronic processing, and develop an on-chip UV sensor based on lateral growth ZnO nanowire arrays. Traditional p...
Thermal Conductivity of 3C/4H-SiC Nanowires by Molecular Dynamics Simulation
Thermal Conductivity of 3C/4H-SiC Nanowires by Molecular Dynamics Simulation
Silicon carbide (SiC) is a promising material for thermoelectric power generation. The characterization of thermal transport properties is essential to understanding their applicat...
Template Synthesis of Ni Nanowires: Characterization and Modelling
Template Synthesis of Ni Nanowires: Characterization and Modelling
Template-assisted electrochemical deposition is a straight forward approach for the synthesis of 1D nanostructures (e.g., nanowire, nanorod, and nanobelt) with controllable morphol...
Lanthanides: Divalent Organometallic Chemistry
Lanthanides: Divalent Organometallic Chemistry
Abstract
This article focuses on the chemistry of Ln
2+
(Ln = lanthanide) complexes that exhibit at least one Ln–C bond. We include t...
The Unique Antimicrobial Effects of Trimolybdate Nanowires
The Unique Antimicrobial Effects of Trimolybdate Nanowires
Trimolybdate nanowires are good candidates for antibacterial applications. We performed systematic experiments to show the antibacterial effects of these nanowires, in particular, ...
Thermal stability of compound stucture of silicon nanowire encapsulated in carbon nanotubes
Thermal stability of compound stucture of silicon nanowire encapsulated in carbon nanotubes
To guide the experiment research, the thermal stability of composite silicon nanowire encapsulated in carbon nanotubes is investigated by computer simulation. The cubic-diamond-str...

