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Stability of hot-wire deposited amorphous-silicon thin-film transistors
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For the first time hydrogenated amorphous silicon, a-Si:H, deposited with the hot-wire technique is incorporated in thin-film transistors (TFTs). Amorphous silicon was deposited at a rate of 20 Å/s. TFTs with a switching ratio of 105, a threshold voltage of 16.9 V, and a field-effect mobility μs of 0.001 cm2/V s are obtained. Upon gate voltage stress, virtually no change in any of these TFT parameters is observed. Conventional state-of-the-art TFTs deposited in a 13.56 MHz glow discharge showed a threshold voltage shift of more than +12 V. The interface between the gate dielectric and the hot-wire a-Si:H layer needs further optimization. After gate voltage stress, the TFTs containing hot-wire a-Si:H have superior quality with respect to the threshold voltage.
Title: Stability of hot-wire deposited amorphous-silicon thin-film transistors
Description:
For the first time hydrogenated amorphous silicon, a-Si:H, deposited with the hot-wire technique is incorporated in thin-film transistors (TFTs).
Amorphous silicon was deposited at a rate of 20 Å/s.
TFTs with a switching ratio of 105, a threshold voltage of 16.
9 V, and a field-effect mobility μs of 0.
001 cm2/V s are obtained.
Upon gate voltage stress, virtually no change in any of these TFT parameters is observed.
Conventional state-of-the-art TFTs deposited in a 13.
56 MHz glow discharge showed a threshold voltage shift of more than +12 V.
The interface between the gate dielectric and the hot-wire a-Si:H layer needs further optimization.
After gate voltage stress, the TFTs containing hot-wire a-Si:H have superior quality with respect to the threshold voltage.
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