Lateral P-N Subband Junctions Fabricated on Patterned Substrates

Lateral p-n subband junctions (LSJ) have been proposed that combine vertical quantum confinements with lateral p-n junctions using an amphoteric dopant Si and patterned substrates. The LSJ was fabricated at the interface between the flat and on the sloped surfaces of Si-delta-doped quantum structures grown on the patterned (111)A substrates. When the forward currents are injected into the LSJ, a recombination emission with a higher level of energy than in the bulk GaAs can be observed. Moreover, we have found tunneling phenomena with negative differential resistance in the LSJ. It was also demonstrated that LSJ structures have a high potential for applications in optic and electrical devices.