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Interfacial Degradation of Insulator/YBa2Cu3Oy Heterostructure due to Mutual Diffusion of Constituent Atoms
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The interfacial degradation of the insulator (SrTiO3, BaTiO3, PbTiO3, and BaO etc.)/YBa2Cu3Oy heterostructures during excimer-laser deposition and subsequent annealing has been investigated. The secondary-ion mass spectroscopy (SIMS) measurement revealed, though very crudely, the mutual diffusion of constituent atoms. More precise data have been obtained quantitatively by measuring the change of the zero-resistance temperatures T
c0's (Kosterlitz-Thoules transition) of ultrathin YBa2Cu3Oy before and after deposition of the insulating layers and annealing. The interfacial degradation developed with time t as t
∼0.4, reflecting the thermal diffusion of constituents. The degradation also depended on the partnering insulating layer, i.e., it was minimized by BaTiO3 and PbTiO3 (lower-melting-point insulators).
Title: Interfacial Degradation of Insulator/YBa2Cu3Oy Heterostructure due to Mutual Diffusion of Constituent Atoms
Description:
The interfacial degradation of the insulator (SrTiO3, BaTiO3, PbTiO3, and BaO etc.
)/YBa2Cu3Oy heterostructures during excimer-laser deposition and subsequent annealing has been investigated.
The secondary-ion mass spectroscopy (SIMS) measurement revealed, though very crudely, the mutual diffusion of constituent atoms.
More precise data have been obtained quantitatively by measuring the change of the zero-resistance temperatures T
c0's (Kosterlitz-Thoules transition) of ultrathin YBa2Cu3Oy before and after deposition of the insulating layers and annealing.
The interfacial degradation developed with time t as t
∼0.
4, reflecting the thermal diffusion of constituents.
The degradation also depended on the partnering insulating layer, i.
e.
, it was minimized by BaTiO3 and PbTiO3 (lower-melting-point insulators).
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