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Highly luminescent CdTe/CdS/ZnO core/shell/shell quantum dots fabricated using an aqueous strategy

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ABSTRACTTo create core/shell/shell quantum dots (QDs) with high stability against a harmful chemical environment, CdTe/CdS QDs were coated with a ZnO shell in an aqueous solution. An interfaced CdS layer sandwiched between a CdTe core and ZnO shell provided relaxation of the strain at the core/shell interface since lattice parameters of CdS are intermediate between those of CdTe and ZnO. The photoluminescence (PL) peak wavelength of the core/shell/shell QDs was shifted from 569 to 615 nm by adjusting the size of CdTe cores and thickness of CdS and ZnO shells, along with the highest PL quantum yield of the core/shell/shell QDs reaching 80%, which implies promising applications in the field of biomedical labeling. Due to the decrease of surface defects, it was observed that PL lifetimes significantly increased at room temperature as follows: 29.6 34.2, and 47.5 ns for CdTe (537 nm), CdTe/CdS (555 nm) and CdTe/CdS/ZnO (581 nm) QDs, respectively. Copyright © 2012 John Wiley & Sons, Ltd.
Title: Highly luminescent CdTe/CdS/ZnO core/shell/shell quantum dots fabricated using an aqueous strategy
Description:
ABSTRACTTo create core/shell/shell quantum dots (QDs) with high stability against a harmful chemical environment, CdTe/CdS QDs were coated with a ZnO shell in an aqueous solution.
An interfaced CdS layer sandwiched between a CdTe core and ZnO shell provided relaxation of the strain at the core/shell interface since lattice parameters of CdS are intermediate between those of CdTe and ZnO.
The photoluminescence (PL) peak wavelength of the core/shell/shell QDs was shifted from 569 to 615 nm by adjusting the size of CdTe cores and thickness of CdS and ZnO shells, along with the highest PL quantum yield of the core/shell/shell QDs reaching 80%, which implies promising applications in the field of biomedical labeling.
Due to the decrease of surface defects, it was observed that PL lifetimes significantly increased at room temperature as follows: 29.
6 34.
2, and 47.
5 ns for CdTe (537 nm), CdTe/CdS (555 nm) and CdTe/CdS/ZnO (581 nm) QDs, respectively.
Copyright © 2012 John Wiley & Sons, Ltd.

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