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Reduced phosphorus loss from InP surface during hydrogen plasma treatment
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A new method for plasma hydrogenation of InP with a reduced phosphorus loss is reported. The loss of P from InP surface is suppressed by the use of a sacrificial InP wafer kept directly in the plasma while the test sample is kept away from it in a downstream geometry. It is shown using photoluminescence that the P vacancy related transitions are considerably reduced for InP hydrogenated in the presence of a sacrificial wafer when compared to the one hydrogenated without it. The results suggest the utility of the sacrificial InP wafer in providing a P overpressure during H plasma exposure.
Title: Reduced phosphorus loss from InP surface during hydrogen plasma treatment
Description:
A new method for plasma hydrogenation of InP with a reduced phosphorus loss is reported.
The loss of P from InP surface is suppressed by the use of a sacrificial InP wafer kept directly in the plasma while the test sample is kept away from it in a downstream geometry.
It is shown using photoluminescence that the P vacancy related transitions are considerably reduced for InP hydrogenated in the presence of a sacrificial wafer when compared to the one hydrogenated without it.
The results suggest the utility of the sacrificial InP wafer in providing a P overpressure during H plasma exposure.
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